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Journal articles
Misfit Layer Compounds: A Platform for Heavily Doped 2D Transition Metal Dichalcogenides
Raphaël Leriche
1
Alexandra Palacio‐morales
2, 1
Marco Campetella
1
Cesare Tresca
1
Shunsuke Sasaki
3
Christophe Brun
1
François Debontridder
1
Pascal David
1
Imad Arfaoui
4
Ondrej Šofranko
5
Tomas Samuely
5
Geoffroy Kremer
6
Claude Monney
6
Thomas Jaouen
7, 6
Laurent Cario
3
Matteo Calandra
8, 9, 1, *
Tristan Cren
1, *
*
Corresponding author
Raphaël Leriche 1
Author
Alexandra Palacio‐morales 2, 1
Author
Marco Campetella 1
Author
Cesare Tresca 1
Author
Shunsuke Sasaki 3
Author
Christophe Brun 1
Author IdHAL : christophe-brun arXiv : https://arxiv.org/a/Christophe Brun ResearcherId : https://orcid.org/0000-0002-1196-5903 ORCID : https://orcid.org/0000-0002-1196-5903
François Debontridder 1
Author IdHAL : francois-debontridder
Pascal David 1
Author
Claude Monney 6
Author
Thomas Jaouen 7, 6
Author IdHAL : jaouent arXiv : https://arxiv.org/a/Jaouen, T IdRef : https://www.idref.fr/164488499 ORCID : https://orcid.org/0000-0001-5844-5385
Laurent Cario 3
Author IdHAL : laurent-cario ORCID : https://orcid.org/0000-0001-5720-4395
Matteo Calandra 8, 9, 1
Correspondent author
Tristan Cren 1
Correspondent author IdHAL : tristan-cren ORCID : https://orcid.org/0000-0001-7105-4098
1
INSP - Institut des Nanosciences de Paris (Sorbonne-Université, Case 840 4 place Jussieu 75252 Paris Cedex 05 - France)
- SU - Sorbonne Université (21 rue de l’École de médecine - 75006 Paris - France)
- CNRS - Centre National de la Recherche Scientifique : UMR7588 (France)
2
LPS - Laboratoire de Physique des Solides (Bat. 510 91405 Orsay cedex - France)
- Université Paris-Saclay (Espace Technologique, Bat. Discovery - RD 128 - 2e ét., 91190 Saint-Aubin - France)
- CNRS - Centre National de la Recherche Scientifique : UMR8502 (France)
3
IMN - Institut des Matériaux Jean Rouxel (Campus Sciences 2 Rue de la Houssinière - BP 32229 44322 NANTES CEDEX 3 - France)
- UN - Université de Nantes (1, quai de Tourville - BP 13522 - 44035 Nantes cedex 1 - France)
- CNRS - Centre National de la Recherche Scientifique : UMR6502 (France)
4
SU - Sorbonne Université (21 rue de l’École de médecine - 75006 Paris - France)
5
CLTP - Centre of Low Temperature Physics IEP SAS (Watonova 47 043 53 Kosice - Slovakia)
- SAS - Slovak Academy of Science [Bratislava] (Štefánikova 898/49, 811 04 Staré Mesto - Bratislava - Slovakia)
6
University of Fribourg (Av. de l'Europe 20, CH-1700 Fribourg
- Switzerland)
7
IPR - Institut de Physique de Rennes (Bâtiment 11A , B, C, E – 10B
263 av. Général Leclerc
35042 Rennes cedex FRANCE - France)
- UR1 - Université de Rennes 1 (2 rue du Thabor - CS 46510 - 35065 Rennes cedex - France)
- UNIV-RENNES - Université de Rennes (France)
- CNRS - Centre National de la Recherche Scientifique : UMR6251 (France)
8
IIT Graphene Labs (Via Morego, 30, 16163 Genova GE - Italy)
- IIT - Istituto Italiano di Tecnologia (Via Morego, 30 16163 Genova - Italy)
9
University of Trento [Trento] (via Calepina, 14 - I-38122 Trento
- Italy)
Abstract : Transition metal dichalcogenides (TMDs) display a rich variety of instabilities such as spin and charge orders, Ising superconductivity, and topological properties. Their physical properties can be controlled by doping in electric double‐layer field‐effect transistors (FET). However, for the case of single layer NbSe2, FET doping is limited to ≈1 × 1014 cm−2, while a somewhat larger charge injection can be obtained via deposition of K atoms. Here, by performing angle‐resolved photoemission spectroscopy, scanning tunneling microscopy, quasiparticle interference measurements, and first‐principles calculations it is shown that a misfit compound formed by sandwiching NbSe2 and LaSe layers behaves as a NbSe2 single layer with a rigid doping of 0.55–0.6 electrons per Nb atom or ≈6 × 1014 cm−2. Due to this huge doping, the 3 × 3 charge density wave is replaced by a 2 × 2 order with very short coherence length. As a tremendous number of different misfit compounds can be obtained by sandwiching TMDs layers with rock salt or other layers, this work paves the way to the exploration of heavily doped 2D TMDs over an unprecedented wide range of doping.
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Journal articles
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https://hal.archives-ouvertes.fr/hal-02993227
Contributor : Thomas Jaouen <>
Submitted on : Tuesday, January 19, 2021 - 2:24:20 PM
Last modification on : Wednesday, January 20, 2021 - 3:38:03 AM
Contributor : Thomas Jaouen <>
Submitted on : Tuesday, January 19, 2021 - 2:24:20 PM
Last modification on : Wednesday, January 20, 2021 - 3:38:03 AM
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Identifiers
- HAL Id : hal-02993227, version 1
- DOI : 10.1002/adfm.202007706
Collections
UNIV-RENNES1 | PMN | SU-SCIENCES | UR1-UFR-SPM | SU-TI | CNRS | IPR | IMN | ALLINSP | OSUR | IPR-MN | INC-CNRS | SORBONNE-UNIVERSITE | INSP | UNIV-NANTES | UNIV-RENNES
Citation
Raphaël Leriche, Alexandra Palacio‐morales, Marco Campetella, Cesare Tresca, Shunsuke Sasaki, et al.. Misfit Layer Compounds: A Platform for Heavily Doped 2D Transition Metal Dichalcogenides. Advanced Functional Materials, Wiley, 2020, pp.2007706. ⟨10.1002/adfm.202007706⟩. ⟨hal-02993227⟩
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