Skip to Main content Skip to Navigation
Journal articles

Ferroelectric Gating of Narrow Band-Gap Nanocrystal Arrays with Enhanced Light Matter Coupling

Abstract : As narrow band gap nanocrystals become a viable building block for the design of infrared sensors, device design needs to match with their actual operating conditions. While in the near IR and shortwave infrared room temperature operation have been demonstrated, longer wavelengths still require low temperature operation requiring specific design. Here, we discuss how field-effect transistors (FETs) can be compatible with low temperature detection. To reach this goal two key developments are proposed. First, we report gating of nanocrystal films from SrTiO3 used as a ferroelectric material leading to high gate capacitance with leakage and breakdown free operation in the 4-100 K range. Secondly, we demonstrate that this FET is compatible with a plasmonic resonator which role is to achieve strong light absorption from a thin film used as the channel of the FET. Combining three resonances, broad band absorption from 1.5 to 3 µm reaching 30% is demonstrated. Finally combining gate and enhanced light matter coupling, we show that detectivity can be as high as 10 12 jones for a device presenting a 3 µm cutoff wavelength and 30 K operation.
Complete list of metadatas

https://hal.archives-ouvertes.fr/hal-03102784
Contributor : Emmanuel Lhuillier <>
Submitted on : Thursday, January 7, 2021 - 5:25:46 PM
Last modification on : Wednesday, February 17, 2021 - 10:58:14 AM

File

STO-v36.pdf
Files produced by the author(s)

Identifiers

Citation

Charlie Gréboval, Audrey Chu, Debora Magalhaes, Julien Ramade, Junling Qu, et al.. Ferroelectric Gating of Narrow Band-Gap Nanocrystal Arrays with Enhanced Light Matter Coupling. ACS photonics, American Chemical Society,, 2021, 8 (1), pp.259-268. ⟨10.1021/acsphotonics.0c01464⟩. ⟨hal-03102784⟩

Share

Metrics

Record views

112

Files downloads

25