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Collection HAL du CRHEA - Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications
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Derniers documents déposés dans HAL
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Guili Zhao, Florian Lochon, Kassiogé Dembélé, Ileana Florea, Alexandre Baron, et al.. Rapid and Facile Synthesis of Gold Trisoctahedrons for Surface-Enhanced Raman Spectroscopy and Refractive Index Sensing. ACS Applied Nano Materials, 2024, 7 (5), pp.5598-5609. ⟨10.1021/acsanm.4c00455⟩. ⟨hal-04514482⟩
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Martin Lepers, Alain Ostrovsky, Patrice Genevet, Stéphane Lanteri, Jérôme Vaillant. Metasurface-based planar microlenses integrated on back-side illuminated CMOS pixels 1 st. IISW 2023 - International Image Sensor Workshop, Internal Image Sensor Society (IISS), May 2023, Crieff, United Kingdom. ⟨cea-04510668⟩
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B. Damilano, R. Aristégui, H. Teisseyre, S. Vézian, V. Guigoz, et al.. Molecular beam epitaxy of GaN/AlGaN quantum wells on bulk GaN substrate in the step-flow or step meandering regime: Influence on indirect exciton diffusion. Journal of Applied Physics, 2024, 135 (9), ⟨10.1063/5.0182659⟩. ⟨hal-04489504⟩
Mots-clés
Traps
Silicium
Coalescence
Bond order wave
CVD
Bending
Optical properties
Electrical properties and parameters
Microscopie électronique en transmission
Free-standing GaN
Graphene
ZnO
Atomic force microscopy
GaN-on-Si
Doping
Molecular beam epitaxy MBE
Schottky barrier diode
6H-SiC
Normally-off
AlN
Epitaxy
Metalens
Gallium nitride
High electron mobility transistor HEMT
Aluminum gallium nitride
III-N
HEMT
LPCVD
Silica
Characterization
III-nitride semiconductors
Strong coupling
AlGaN/GaN HEMT
Tunnel junction
Croissance
Semiconducteurs
Nitrides
Bullseye antennas
Silicon
Al
Quantum dots
Chemical vapor deposition processes
Zinc oxide
Light emitting diodes
MBE
Dislocations
Épitaxie
Chemical vapor deposition
High electron mobility transistors
Compressive stress
DLTFS
Spectroscopy
AlGaN/GaN
Gallium nitride GaN
Transistor
Aluminum nitride
Electron holography
MOCVD
2D materials
Boîtes quantiques
Nitrures d'éléments III
Selective area growth
Nanoparticles
Cathodoluminescence
Boron nitride
Group III-nitrides
Microcavity
AlGaN
Silicon carbide
Creep
High electron mobility transistor
Millimeter-wave power density
Nanowire
Semiconductors
Excitons
GaN HEMT
CRYSTALS
Nitrure de gallium
Quantum wells
III-nitrides
Molecular beam epitaxy
Épitaxie par jets moléculaires
Photoluminescence
Nanostructures
Transmission electron microscopy
Caractérisation
LED
Holography
Diodes électroluminescentes
Heterostructures
Diffraction
Contraintes
LEDs
GaN
Defects
Metasurfaces
Atom probe tomography
3C–SiC
Metasurface
InGaN
Nombre de documents
324
Nombre de notices
450