Optical gain at 1.53 µm in Er3+-Yb3+ codoped oxidised porous silicon waveguides - Foton - Fonctions Optiques pour les Technologies de l'informatiON Accéder directement au contenu
Communication Dans Un Congrès Année : 2007

Optical gain at 1.53 µm in Er3+-Yb3+ codoped oxidised porous silicon waveguides

Résumé

Erbium-ytterbium (Er-Yb)-co-doped porous silicon planar waveguides were prepared from P+-type (1 0 0) oriented silicon wafer. Erbium and ytterbium ions were electrochemically introduced into the porous structure of the waveguide core. The doping profiles of erbium and ytterbium ions were determined by EDX analysis performed on sample cross-section. The mean concentration in the guiding layer is of about 1 × 10^20 cm−3. The refractive indices were measured from co-doped porous silicon and undoped waveguides after the thermal treatments. The photoluminescence (PL) peak of optically activated erbium ions at 1.53 μm was recorded. The PL enhancement is the result of the energy transfer from the excited state of Yb to the state of Er. Optical losses at 1.55 μm were measured on these waveguides and were of about 2 dB/cm. An internal gain at 1.53 μm of 5.8 dB/cm has been measured with a pump power of 65 mW at 980 nm.
Fichier principal
Vignette du fichier
Najar2008.pdf (227.52 Ko) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-00275921 , version 1 (09-11-2021)

Licence

Paternité

Identifiants

Citer

Adel Najar, Joël Charrier, H. Ajlani, Nathalie Lorrain, Severine Haesaert, et al.. Optical gain at 1.53 µm in Er3+-Yb3+ codoped oxidised porous silicon waveguides. European Materials Research Society Spring Meeting 2007 (E-MRS Spring Meeting 2007), Jun 2007, Strasbourg, France. pp.260-263, ⟨10.1016/j.mseb.2007.07.085⟩. ⟨hal-00275921⟩
58 Consultations
36 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More