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Article Dans Une Revue Applied Physics Letters Année : 2019

InAs/InP quantum dot VECSEL emitting at 1.5 μm

Résumé

A high-power InAs quantum dot (QDs) vertical-external-cavity surface-emitting laser emitting at 1.5 µm is reported. The active region employs 20 layers of high-density Stranski-Krastanow InAs quantum dots on InP substrate. QDs density and emission wavelength was independently adjusted by employing a double-cap growth sequence. Optimization of the spacer layers thickness and strain compensation rendered possible nucleation of a relatively high number of QD layers per antinode of the electromagnetic standing wave, which in turn enabled a high output power continuous wave operation of about 2.2 W. The operation wavelength could be tuned over 60 nm, taking advantage of the broadband gain characteristic of QD media. AS
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Dates et versions

hal-02338850 , version 1 (30-10-2019)

Identifiants

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Kostiantyn Nechay, Alexandru Mereuta, Cyril Paranthoen, Gaëlle Brévalle, Christophe Levallois, et al.. InAs/InP quantum dot VECSEL emitting at 1.5 μm. Applied Physics Letters, 2019, 115 (17), pp.171105. ⟨10.1063/1.5125632⟩. ⟨hal-02338850⟩
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