Self-phase modulation and four-wave mixing in a chalcogenide ridge waveguide

Enguerran Delcourt (1) , Nessim Jebali (1) , Loïc Bodiou (1) , Marion Baillieul (2) , Emeline Baudet (2) , Jonathan Lemaitre (1) , Virginie Nazabal (2) , Yannick Dumeige (1) , Joël Charrier (1)

1 FOTON - Institut des Fonctions Optiques pour les Technologies de l'informatiON
2 ISCR - Institut des Sciences Chimiques de Rennes

Third order optical nonlinear effects relying on the instantaneous Kerr effect are investigated in a straight chalcogenide ridge waveguide. The sample consists of a GeSbSe film deposited on a thermally oxidized silicon substrate. Ridge waveguides were processed using photolithography and dry etching techniques. From a 1.1 cm long integrated GeSbSe device, self-phase modulation with a maximum nonlinear phase shift of 2.02 π for a peak power of 15.8 W and four-wave mixing with an external conversion efficiency of −42.6 dB for a pump power of 28 mW are demonstrated. Experimental results show a good agreement with calculations.

Domaines: Optique / photonique

Enguerran Delcourt, Nessim Jebali, Loïc Bodiou, Marion Baillieul, Emeline Baudet, et al.. Self-phase modulation and four-wave mixing in a chalcogenide ridge waveguide. Optical Materials Express, 2020, 10 (6), pp.1440-1450. ⟨10.1364/OME.393535⟩. ⟨hal-02879002⟩