Electronic structure of Ln2O2Te (Ln=La, Sm and Gd) by X-ray absorption spectroscopy

Abstract : The oxytellurides are layered structure material which shows low lattice thermal conductivity and hence making them suitable for high temperature thermoelectric applications. We report the electronic structural properties of rare-earth doped oxytellurides [Ln2O2Te (Ln = La, Sm and Gd)] prepared by solid state reaction method. This research is focused on the suitability of rare-earth oxychalcogenide as a thermoelectric material using the electronic structure investigations. The X-ray absorption spectra at O K-edge show the O 2p bonding with Ln 5d and 4f and Te 5s states and the Ln M-edges show that the valences of Ln are to be trivalent or mixed states. The Ln M-edges are also simulated with Cowan code, and electronic structures of these oxytellurides are discussed. The substitution of different rare earth metals at the Ln-site, may enhance the thermoelectric property and stability of the material. © 2018 Elsevier Ltd
Type de document :
Article dans une revue
Vacuum, Elsevier, 2018, 158, pp.39-41. 〈10.1016/j.vacuum.2018.09.008〉
Domaine :
Liste complète des métadonnées

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Soumis le : vendredi 14 décembre 2018 - 16:02:36
Dernière modification le : jeudi 17 janvier 2019 - 01:18:06

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S. Gautam, K.H. Chae, J. Llanos, O. Peña, K. Asokan. Electronic structure of Ln2O2Te (Ln=La, Sm and Gd) by X-ray absorption spectroscopy. Vacuum, Elsevier, 2018, 158, pp.39-41. 〈10.1016/j.vacuum.2018.09.008〉. 〈hal-01905104〉

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