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Article Dans Une Revue Physical Review B: Condensed Matter and Materials Physics (1998-2015) Année : 2014

Interplay between atomic disorder, lattice swelling and defect energy in ion-irradiation-induced amorphization of SiC

Résumé

A combination of experimental and computational evaluations of disorder level and lattice swelling in ion-irradiated materials is presented. Information obtained from X-ray diffraction experiments is compared to X-ray diffraction data generated using atomic-scale simulations. The proposed methodology, which can be applied to a wide range of crystalline materials, is used to study the amorphization process in irradiated SiC. Results show that this process can be divided into two steps. In the first step, point defects and small defect clusters are produced and generate both large lattice swelling and high elastic energy. In the second step, enhanced coalescence of defects and defect clusters occurs to limit this increase in energy, which rapidly leads to complete amorphization. 2

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Matériaux
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Dates et versions

hal-02194005 , version 1 (25-07-2019)

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A. Debelle, Alexandre Boulle, A. Chartier, F. Gao, W. J. Weber. Interplay between atomic disorder, lattice swelling and defect energy in ion-irradiation-induced amorphization of SiC. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2014, 90 (17), ⟨10.1103/PhysRevB.90.174112⟩. ⟨hal-02194005⟩
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