Effect of a lattice-matched GaAsSb capping layer on the structural properties of InAs/InGaAs/InP quantum dots

J.-M. Ulloa (1) , Paul Koenraad (1) , Maximilien Bonnet-Eymard (2) , Antoine Letoublon (2) , Nicolas Bertru (2)

1 COBRA - Cobra
2 FOTON - Fonctions Optiques pour les Technologies de l'informatiON

The influence of a lattice-matched GaAsSb capping layer on the structural properties of self-assembled InAs quantum dots (QDs) grown on InP substrates is studied on the atomic scale by cross-sectional scanning tunneling microscopy. While lattice-matched In0.53Ga0.47As-capped QDs are clearly truncated pyramids, GaAs0.51Sb0.49-capped QDs grown under the same conditions look like full pyramids and exhibit a larger height, indicating that capping with GaAsSb reduces dot decomposition. Since there are no differences in strain between the two capping layers, this behavior is most likely related to the surfactant effect of Sb, which stabilizes the growth front and avoids adatom migration.

Mots clés: antimony quantum dots X-STM

Domaines: Optique / photonique

J.-M. Ulloa, Paul Koenraad, Maximilien Bonnet-Eymard, Antoine Letoublon, Nicolas Bertru. Effect of a lattice-matched GaAsSb capping layer on the structural properties of InAs/InGaAs/InP quantum dots. Journal of Applied Physics, 2010, 107, pp.74309. ⟨10.1063/1.3361036⟩. ⟨hal-00484943⟩