Fabrication of amorphous silicon nanoribbons by atomic force microscope tip induced local oxidation for thin film device applications

Laurent Pichon (1) , Regis Rogel (2) , Fouad Demami (2)

1 IETR - Institut d'Électronique et des Technologies du numéRique
2 IETR - Institut d'Electronique et de Télécommunications de Rennes

We demonstrate the feasibility of induced local oxidation of amorphous silicon by atomic force microscopy. The resulting local oxide is used as mask for the elaboration of thin film silicon resistor. A thin amorphous silicon layer deposited on a glass substrate is locally oxidized following narrow continuous lines. The corresponding oxide line is then used as mask during plasma etching of the amorphous layer leading to the formation of nanoribbon. Such amorphous silicon nanoribbon is used for the fabrication of resistor.

Domaines: Micro et nanotechnologies/Microélectronique

Laurent Pichon, Regis Rogel, Fouad Demami. Fabrication of amorphous silicon nanoribbons by atomic force microscope tip induced local oxidation for thin film device applications. Semiconductor Science & Technology, 2010, 25, pp.065001. ⟨10.1088/0268-1242/25/6/065001⟩. ⟨hal-00486628⟩