Effect of adding argon in silane-hydrogen mixture during the deposition of doped and doped µc-SI and µc-SIGe films : Crystalline content and TFT performance

Claude Simon (1) , Nathalie . Coulon (1) , Khalid Kandoussi (2) , Rabah Cherfi (2) , Abdelkrim Fedala (2) , Tayeb Mohammed-Brahim (1)

1 IETR - Institut d'Électronique et des Technologies du numéRique
2 IETR - Institut d'Electronique et de Télécommunications de Rennes

Claude Simon, Nathalie . Coulon, Khalid Kandoussi, Rabah Cherfi, Abdelkrim Fedala, et al.. Effect of adding argon in silane-hydrogen mixture during the deposition of doped and doped µc-SI and µc-SIGe films : Crystalline content and TFT performance. International Thin Film Transistor Conference, ITC'10, Jan 2010, Himeji, Japan. pp.92-95. ⟨hal-00511809⟩