Electrical properties of polysilicon nanowires for devices applications

Fouad Demami (1) , Régis Rogel (2) , Anne-Claire Salaün (2) , Laurent Pichon (1)

1 IETR - Institut d'Electronique et de Télécommunications de Rennes
2 IETR - Institut d'Électronique et des Technologies du numéRique

Polysilicon nanowires are synthesized using the well known and low cost technique commonly used in microelectronic industry: the sidewall spacer formation technique. Polysilicon layer is de-posited by Low Pressure Chemical Vapour Deposition technique on SiO2 wall patterned by conventional UV lithography tech-nique. Polysilicon film is then plasma etched. Accurate control of the etching rate leads to the formation of nanometric size side-wall spacers with a curvature radius as low as 100nm used as polysilicon nanowires. These polysilicon nanowires are first in-tegrated into the fabrication of electrical devices as resistors and electrical properties are studied in function of in situ phosphorus doping levels. I(T) measurements show that polysilicon nanowires dark conductivity is thermally activated according to the Seto's theory. In addition, field effect transistors made with such polysilicon nanowires used as channel region highlight promising field effect behaviour.

Mots clés: polysilicon; nanowires; spacer; in-situ doping; resistor; doping

Domaines: Micro et nanotechnologies/Microélectronique

Fouad Demami, Régis Rogel, Anne-Claire Salaün, Laurent Pichon. Electrical properties of polysilicon nanowires for devices applications. physica status solidi (c), 2011, 8 (3), pp.827. ⟨10.1002/pssc.201000227⟩. ⟨hal-00617939⟩