High rectifying behavior in Al/Sinanocrystal-embedded SiOxNy/p-Si heterojunctions

Emmanuel Jacques (1) , Laurent Pichon (1) , Olivier Debieu (2) , Fabrice Gourbilleau (2) , Nathalie . Coulon (1)

1 IETR - Institut d'Electronique et de Télécommunications de Rennes
2 CIMAP - UMR 6252 - Centre de recherche sur les Ions, les MAtériaux et la Photonique

We examine the electrical properties of MIS devices made of Al/Si nanocrystal-SiOxNy/p Si. The J V characteristics of the devices present a high rectifying behavior. Temperature measurements show that the forward current is thermally activated following the thermal diffusion model of carriers. At low reverse bias, the current is governed by thermal emission amplified by Poole-Frenkel effect of carriers from defects located in the silicon nanocrystals/SiOxNy interfaces, whereas tunnel conduction in silicon oxynitride matrix dominates at high reverse bias. Devices exhibit a rectification ratio >104 for the current measured at V=  1V. Study reveals that thermal annealing in forming gas (H2/N2) improves electrical properties of the devices due to the passivation of defects.

Domaines: Micro et nanotechnologies/Microélectronique

Emmanuel Jacques, Laurent Pichon, Olivier Debieu, Fabrice Gourbilleau, Nathalie . Coulon. High rectifying behavior in Al/Sinanocrystal-embedded SiOxNy/p-Si heterojunctions. Semiconductor Science and Technology, 2011, 26 (5), pp.055005. ⟨10.1088/0268-1242/26/5/055005⟩. ⟨hal-00618094⟩