Structural charaterisation of GaP/Si nanolayers

Weiming Guo (1) , Thanh Tra Nguyen (1) , Georges Elias (2) , Antoine Létoublon (1) , Charles Cornet (1) , Anne Ponchet (2) , Alexandre Bondi (1) , Tony Rohel (1) , Nicolas Bertru (1) , Cédric Robert Robert (1) , Olivier Durand (1) , J.-S. Micha (3) , Alain Le Corre (1)

1 FOTON - Fonctions Optiques pour les Technologies de l'informatiON
2 CEMES - Centre d'élaboration de matériaux et d'études structurales
3 SPRAM - UMR 5819 - Structures et propriétés d'architectures moléculaire

Growth of GaP (III-V semiconductor) directly deposited on Si has been proposed to overcome the problems of lattice mismatch, in the context of monolithic integration of photonics on silicon. [1] However, long-term stable device per-formance implies reproducible achievement of defect-free interfaces between III-V and Si. Among them, antiphase do-mains (APD) and microtwins (MT) are quite difficult to avoid. And characterization means sensitive to these defects must employed for optimization of the growth pocess and qualification of the grown layers. Lab setup and synchrotron XRD is combined with TEM and AFM osbervations.

Domaines: Optique / photonique

Weiming Guo, Thanh Tra Nguyen, Georges Elias, Antoine Létoublon, Charles Cornet, et al.. Structural charaterisation of GaP/Si nanolayers. Compound Semiconductor Week 2011 - 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011), May 2011, Berlin, Germany. pp.1-4. ⟨hal-00654292⟩