Room temperature photoluminescence of high density (In,Ga)As/GaP quantum dots

Thanh Tra Nguyen (1) , Cédric Robert Robert (1) , Charles Cornet (1) , Mathieu Perrin (1) , Jean-Marc Jancu (1) , Nicolas Bertru (1) , Jacky Even (1) , Nicolas Chevalier (1) , Hervé Folliot (1) , Olivier Durand (1) , Alain Le Corre (1)

1 FOTON - Fonctions Optiques pour les Technologies de l'informatiON

We report on the achievement of high density (In,Ga)As self-assembled quantum dots on GaP substrate with a good homogeneity. Good structural and electronic properties have been achieved, as revealed by room temperature photoluminescence measurements and by comparison to both InAs/GaAs and InAs/InP materials reference systems. This is supported by atomistic calculations where the indium incorporation in InGaAs/GaP quantum structures is found to enhance both the type-I bandlineup and direct bandgap properties. The photoluminescence temperature dependence of the bandgap evidences the quantum confinement effects. Our results provide a valid framework to implement silicon optical devices based on InGaAs/GaP nanostructures

Domaines: Optique / photonique

Thanh Tra Nguyen, Cédric Robert Robert, Charles Cornet, Mathieu Perrin, Jean-Marc Jancu, et al.. Room temperature photoluminescence of high density (In,Ga)As/GaP quantum dots. Applied Physics Letters, 2011, 99, pp.143123. ⟨10.1063/1.3646911⟩. ⟨hal-00654296⟩