Similarities between µc-Si TFT with Very Thin Active Layer and FD-SOI FETs

Tayeb Mohammed-Brahim (1) , Khalid Kandoussi (1) , Khaled Belarbi (1) , Hervé Lhermite (1) , Nathalie . Coulon (1) , Claude Simon (1)

1 IETR - Institut d'Électronique et des Technologies du numéRique

The subthreshold slope of microcrystalline silicon Thin Film Transistor is shown to be highly improved when the thickness of the active layer is enough decreased. In the same manner, the threshold voltage of these TFTs with very thin active layer is shown to be controlled dynamically with high efficiency by a second gate in front of the first one. These behaviours are explained considering the similarities between these TFTs and fully depleted SOI-MOSFETs as well as with dual-gate SOI-MOSFETS.

Domaines: Micro et nanotechnologies/Microélectronique

Tayeb Mohammed-Brahim, Khalid Kandoussi, Khaled Belarbi, Hervé Lhermite, Nathalie . Coulon, et al.. Similarities between µc-Si TFT with Very Thin Active Layer and FD-SOI FETs. 2011 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC vs. TFT), Jun 2011, Hong Kong, China. pp.39-47, ⟨10.1149/1.3600722⟩. ⟨hal-00680429⟩