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Communication Dans Un Congrès Année : 2012

Theoretical and experimental study of (In,Ga)As/GaP quantum dots

Pascal Turban
  • Fonction : Auteur
  • PersonId : 896
  • IdHAL : pturban
Sylvain Tricot

Résumé

(In,Ga)As/GaP(001) quantum dots (QDs) are grown by molecular beam epitaxy and studied both theoretically and experimentally. The electronic band structure is simulated using a combination of k*p and tight-binding models. These calculations predict an indirect to direct crossover with the In content and the size of the QDs. The optical properties are then studied in a low-In-content range through photoluminescence and time-resolved photoluminescence experiments. It suggests the proximity of two optical transitions of indirect and direct types.
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Dates et versions

hal-00726861 , version 1 (10-03-2014)

Identifiants

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Cédric Robert Robert, Thanh Tra Nguyen, Charles Cornet, Pascal Turban, Mathieu Perrin, et al.. Theoretical and experimental study of (In,Ga)As/GaP quantum dots. International Conference on Superlattices, Nanostructures, and Nanodevices (ICSNN 2012), Jul 2012, Dresden, Germany. pp.643, ⟨10.1186/1556-276X-7-643⟩. ⟨hal-00726861⟩
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