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Communication Dans Un Congrès AIP Conference Proceedings Année : 2013

Intrinsic optical confinement for ultrathin InAsN quantum well superlattices

Résumé

We study energy-band engineering with InAsN monolayer in GaAs/GaP quantum well structure. A tight-binding calculation indicates that both type I alignment along with direct band-gap behavior can be obtained. We show that the optical transitions are less sensitive to the position of the probe.
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Dates et versions

hal-00726876 , version 1 (31-08-2012)

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Citer

Abdallah Sakri, Cédric Robert Robert, Charles Cornet, Laurent Pedesseau, Jacky Even, et al.. Intrinsic optical confinement for ultrathin InAsN quantum well superlattices. 31st International Conference on the Physics of Semiconductors (ICPS 2012), Jul 2012, Zurich, Switzerland. pp.464, ⟨10.1063/1.4848486⟩. ⟨hal-00726876⟩
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