, Rev. Mod. Phys, vol.76, p.2004
, Phys. Rev. B, vol.62, pp.4790-2000
, Phys. Rev. B, vol.62, pp.16267-2000
, Phys. Rev. B, vol.64, pp.184420-2001
,
, Phys. Rev. Lett, vol.94, pp.56601-2005
, Appl. Phys. Express, vol.2, pp.23006-2009
, Appl. Phys. Lett, vol.94, p.2009
, Appl. Phys. Lett, vol.91, p.2007
, To avoid the formation of highly resistive layer at interface between the buffer layer doped at 5 ? 10 16 cm ?3 and the substrate ?Ref
, J. Vac. Sci. Technol. A, vol.8, pp.2980-1990
, J. Appl. Phys, vol.68, p.1990
, Appl. Phys. Lett, vol.88, pp.42108-2006
, Appl. Phys. Lett, vol.49, p.1986
, Solid-State Electron, vol.10, p.1967
, J. Appl. Phys, vol.34, p.1963
, Phys. Rev. B, vol.63, pp.54416-2001
, Solid-State Electron. 9, vol.695, p.1966
, To calculate the range of temperature over which our junction exhibits FE an electron Schottky barrier height of 0.8 eV and a doping concentration of 2 ? 10 19 cm ?3 have been considered
, Electronic Processes in Non-Crystalline Materials ?Clarendon, p.32, 1979.
Electronic Properties of Doped Semiconductors ?Springer, p.208, 1984. ,
, Semiconductors 36, vol.505, p.2002
, Semiconductors, vol.38, p.2004
, J. Appl. Phys, vol.61, 20951987.