Variable range hopping conduction in N- and P-type in-situ doped polycrystalline silicon nanowires

Laurent Pichon (1) , Emmanuel Jacques (1) , Régis Rogel (2) , Anne-Claire Salaün (2) , Fouad Demami (1)

1 IETR - Institut d'Electronique et de Télécommunications de Rennes
2 IETR - Institut d'Électronique et des Technologies du numéRique

Temperature dependence of electrical properties in N- and P-type in-situ doped polycrystalline silicon nanowires synthesized by the sidewall spacer formation technique has been studied. Experimental analysis has been carried out for a temperature range from 200K to 530K on in-situ doped polycrystalline silicon nanowires with doping level varying from 2×1016 to 9×1018 cm-3. Results show that for N- and P-type doped samples the temperature dependence of the conductivity follows the 3D variable range hopping model due to hopping between localized electronic states near the Fermi level. The corresponding densities of states are determined following exponentials (tail states) distributions associated to the statistical shift of the Fermi level.

Mots clés: N-type and P-type polycristalline silicon nanowires; variable range hopping

Domaines: Micro et nanotechnologies/Microélectronique

Laurent Pichon, Emmanuel Jacques, Régis Rogel, Anne-Claire Salaün, Fouad Demami. Variable range hopping conduction in N- and P-type in-situ doped polycrystalline silicon nanowires. Semiconductor Science and Technology, 2013, 28, pp.025002. ⟨10.1088/0268-1242/28/2/025002⟩. ⟨hal-00777602⟩