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Journal articles
Bottom-gate and Step-gate Polysilicon Nanowires Field Effect Transistors for Ultrasensitive Label-free Biosensing Application
Abstract : Simple and low-cost polycrystalline silicon nanowires field effect transistor (poly-SiNWFET) are fabricated using two different configurations: step-gate and back-gate. The nanowires are synthesized using the sidewall spacer formation technique compatible with the well-known CMOS technology. Probe DNA strands immobilization is performed by the functionalization of poly-SiNWs using APTES and glutaraldehyde. Hybridization phenomenon is detected on electrical characteristics of the poly-SiNWFETs. The first results demonstrate that these devices are promising tools for low-cost, real time and label-free DNA sensing with detection limit at 1fM.
https://hal-univ-rennes1.archives-ouvertes.fr/hal-00843855
Contributor : Alice Brébion <>
Submitted on : Friday, July 12, 2013 - 11:35:42 AM
Last modification on : Tuesday, January 12, 2021 - 4:51:04 PM
Contributor : Alice Brébion <>
Submitted on : Friday, July 12, 2013 - 11:35:42 AM
Last modification on : Tuesday, January 12, 2021 - 4:51:04 PM
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