Bottom-gate and Step-gate Polysilicon Nanowires Field Effect Transistors for Ultrasensitive Label-free Biosensing Application

Abstract : Simple and low-cost polycrystalline silicon nanowires field effect transistor (poly-SiNWFET) are fabricated using two different configurations: step-gate and back-gate. The nanowires are synthesized using the sidewall spacer formation technique compatible with the well-known CMOS technology. Probe DNA strands immobilization is performed by the functionalization of poly-SiNWs using APTES and glutaraldehyde. Hybridization phenomenon is detected on electrical characteristics of the poly-SiNWFETs. The first results demonstrate that these devices are promising tools for low-cost, real time and label-free DNA sensing with detection limit at 1fM.