Bottom-gate and Step-gate Polysilicon Nanowires Field Effect Transistors for Ultrasensitive Label-free Biosensing Application

Gertrude Godem-Wenga (1) , Emmanuel Jacques (1) , Anne-Claire Salaün (1) , Régis Rogel (1) , Laurent Pichon (1) , Florence Geneste (2)

1 IETR - Institut d'Électronique et des Technologies du numéRique
2 ISCR - Institut des Sciences Chimiques de Rennes

Simple and low-cost polycrystalline silicon nanowires field effect transistor (poly-SiNWFET) are fabricated using two different configurations: step-gate and back-gate. The nanowires are synthesized using the sidewall spacer formation technique compatible with the well-known CMOS technology. Probe DNA strands immobilization is performed by the functionalization of poly-SiNWs using APTES and glutaraldehyde. Hybridization phenomenon is detected on electrical characteristics of the poly-SiNWFETs. The first results demonstrate that these devices are promising tools for low-cost, real time and label-free DNA sensing with detection limit at 1fM.

Mots clés: sensitivity; label-free detection; DNA hyvridization; Low-cost silicon nanowires devices; CMOS compatible

Domaines: Matériaux

Gertrude Godem-Wenga, Emmanuel Jacques, Anne-Claire Salaün, Régis Rogel, Laurent Pichon, et al.. Bottom-gate and Step-gate Polysilicon Nanowires Field Effect Transistors for Ultrasensitive Label-free Biosensing Application. Procedia Engineering, 2012, 47, pp.414-417. ⟨10.1016/j.proeng.2012.09.172⟩. ⟨hal-00843855⟩