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Bottom-gate and Step-gate Polysilicon Nanowires Field Effect Transistors for Ultrasensitive Label-free Biosensing Application

Abstract : Simple and low-cost polycrystalline silicon nanowires field effect transistor (poly-SiNWFET) are fabricated using two different configurations: step-gate and back-gate. The nanowires are synthesized using the sidewall spacer formation technique compatible with the well-known CMOS technology. Probe DNA strands immobilization is performed by the functionalization of poly-SiNWs using APTES and glutaraldehyde. Hybridization phenomenon is detected on electrical characteristics of the poly-SiNWFETs. The first results demonstrate that these devices are promising tools for low-cost, real time and label-free DNA sensing with detection limit at 1fM.
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https://hal-univ-rennes1.archives-ouvertes.fr/hal-00843855
Contributor : Alice Brébion <>
Submitted on : Friday, July 12, 2013 - 11:35:42 AM
Last modification on : Monday, October 5, 2020 - 9:50:17 AM

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Gertrude Godem-Wenga, Emmanuel Jacques, Anne-Claire Salaün, Régis Rogel, Laurent Pichon, et al.. Bottom-gate and Step-gate Polysilicon Nanowires Field Effect Transistors for Ultrasensitive Label-free Biosensing Application. Procedia Engineering, Elsevier, 2012, 47, pp.414-417. ⟨10.1016/j.proeng.2012.09.172⟩. ⟨hal-00843855⟩

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