Bottom-gate and Step-gate Polysilicon Nanowires Field Effect Transistors for Ultrasensitive Label-free Biosensing Application - Archive ouverte HAL Access content directly
Journal Articles Procedia Engineering Year : 2012

Bottom-gate and Step-gate Polysilicon Nanowires Field Effect Transistors for Ultrasensitive Label-free Biosensing Application

Abstract

Simple and low-cost polycrystalline silicon nanowires field effect transistor (poly-SiNWFET) are fabricated using two different configurations: step-gate and back-gate. The nanowires are synthesized using the sidewall spacer formation technique compatible with the well-known CMOS technology. Probe DNA strands immobilization is performed by the functionalization of poly-SiNWs using APTES and glutaraldehyde. Hybridization phenomenon is detected on electrical characteristics of the poly-SiNWFETs. The first results demonstrate that these devices are promising tools for low-cost, real time and label-free DNA sensing with detection limit at 1fM.

Dates and versions

hal-00843855 , version 1 (12-07-2013)

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Gertrude Godem-Wenga, Emmanuel Jacques, Anne-Claire Salaün, Régis Rogel, Laurent Pichon, et al.. Bottom-gate and Step-gate Polysilicon Nanowires Field Effect Transistors for Ultrasensitive Label-free Biosensing Application. Procedia Engineering, 2012, 47, pp.414-417. ⟨10.1016/j.proeng.2012.09.172⟩. ⟨hal-00843855⟩
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