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Journal articles
Electrical Resistivity Behavior and VRH Transport Mechanism in Semiconducting La0.6Sr0.4Mn1−2x Fe x Cr x O3 (0.10≤x≤0.25) Manganites
Abstract : The transport properties and conduction mechanism in La0.6Sr0.4Mn1−2x Fe x Cr x O3 (0≤x≤0.3) have been investigated. The undoped samples show metal-semiconductor transition with a peak of resistivity at a temperature T P , whereas for all doped compounds the semiconducting behavior persists in the whole temperature range. The insertion of Cr3+ and Fe3+ ions leads to the increase of resistivity because the simultaneous substitution of Fe3+ and Cr3+ for Mn3+ reduces the number of available hopping sites for the Mn e g↑ electron and suppresses the double-exchange mechanism. It was found that the transport mechanism for substituted samples is dominated by the variable range hopping of small polarons between localized states in a model where the various parameters estimated from Mott's relation obey the variable range hopping (VRH) mechanism.
Cited literature [22 references]
https://hal-univ-rennes1.archives-ouvertes.fr/hal-00845670
Contributor : Laurent Jonchère <>
Submitted on : Wednesday, July 17, 2013 - 3:16:18 PM
Last modification on : Wednesday, October 21, 2020 - 3:13:52 AM
Long-term archiving on: : Friday, October 18, 2013 - 4:32:15 AM
Contributor : Laurent Jonchère <>
Submitted on : Wednesday, July 17, 2013 - 3:16:18 PM
Last modification on : Wednesday, October 21, 2020 - 3:13:52 AM
Long-term archiving on: : Friday, October 18, 2013 - 4:32:15 AM
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SBen-Abdelkhalek-accepted.pdf
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