VCSEL Based on InAs Quantum-Dashes With a Lasing Operation Over a 117-nm Wavelength Span

Fethallah Taleb (1) , Christophe Levallois (1) , Cyril Paranthoën (1) , Jean-Philippe Gauthier (2) , Nicolas Chevalier (1) , Mathieu Perrin (1) , Yoan Léger (1) , Olivier de Sagazan (2) , Alain Le Corre (1)

1 FOTON - Fonctions Optiques pour les Technologies de l'informatiON
2 IETR - Institut d'Électronique et des Technologies du numéRique

We report an InP based vertical cavity surface emitting laser (VCSEL) achieving a lasing operation between 1529 and 1646 nm. This optically-pumped VCSEL includes a wide-gain bandwidth active region based on InAs quantum dashes and wideband dielectric Bragg mirrors. Based on a wedge microcavity design, we obtain a spatial dependence of the resonant wavelength along the wafer, enabling thus to monitor the gain material bandwidth. We demonstrate a 117 nm continuous wavelength variation of the VCSEL emission, a consequence of the important and wide gain afforded by the use of optimized quantum dashes.

Mots clés: Quantum dash lasers; semiconductor lasers; vertical cavity surface emitting lasers

Domaines: Optique / photonique; Science des matériaux [cond-mat.mtrl-sci]

Fethallah Taleb, Christophe Levallois, Cyril Paranthoën, Jean-Philippe Gauthier, Nicolas Chevalier, et al.. VCSEL Based on InAs Quantum-Dashes With a Lasing Operation Over a 117-nm Wavelength Span. IEEE Photonics Technology Letters, 2013, 25 (21), pp.2126-2128. ⟨10.1109/LPT.2013.2282084⟩. ⟨hal-00874033⟩