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Article Dans Une Revue Applied Physics Letters Année : 2012

Tuning the Schottky barrier height at MgO/metal interface

Thomas Jaouen
Guy Jézéquel
  • Fonction : Auteur
  • PersonId : 919048
Gabriel Delhaye
Bruno Lépine
Pascal Turban
  • Fonction : Auteur
  • PersonId : 896
  • IdHAL : pturban
Philippe Schieffer

Résumé

We present an experimental investigation of the interface electronic structure of thin MgO films epitaxially grown on Ag(001) by x-ray and ultraviolet photoemission spectroscopy as a function of the oxide growth conditions. It is shown that the Schottky barrier height at MgO/metal interface can be tuned over 0.7 eV by a modification of the oxygen partial pressure or the sample temperature. These experimental results are explained in the framework of the extended Schottky-Mott model and the MgO-induced polarization effect by Mg enrichment of the silver surface region.
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Dates et versions

hal-00910875 , version 1 (28-11-2013)

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Thomas Jaouen, Guy Jézéquel, Gabriel Delhaye, Bruno Lépine, Pascal Turban, et al.. Tuning the Schottky barrier height at MgO/metal interface. Applied Physics Letters, 2012, 100 (2), pp.022103-022103-3. ⟨10.1063/1.3675859⟩. ⟨hal-00910875⟩
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