Structural and optical properties of AlGaP confinement layers and InGaAs quantum dots light emitters onto GaP substrate: towards photonics on silicon application - Université de Rennes Accéder directement au contenu
Communication Dans Un Congrès Année : 2013

Structural and optical properties of AlGaP confinement layers and InGaAs quantum dots light emitters onto GaP substrate: towards photonics on silicon application

Pascal Turban
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  • IdHAL : pturban

Résumé

AlGaP alloy and InGaAs/GaP quantum dots are studied toward possible solutions for the cladding layers and the active zone of a pseudomorphic laser structure on silicon. Coherent growth of AlGaP layers on GaP substrate is carefully analysed by X-ray reciprocal space mapping. The influence of Al content on refractive index is studied by spectroscopic ellipsometry. The structural and optical properties of InGaAs/GaP quantum dots are respectively studied by scanning tunnelling microscopy and time-resolved photoluminescence experiments.

Dates et versions

hal-00918657 , version 1 (13-12-2013)

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Citer

Cédric Robert Robert, Thanh Tra Nguyen, Mathieu Perrin, Charles Cornet, Antoine Létoublon, et al.. Structural and optical properties of AlGaP confinement layers and InGaAs quantum dots light emitters onto GaP substrate: towards photonics on silicon application. European Materials Research Society Spring Meeting 2012 (E-MRS Spring 2012), May 2012, Strasbourg, France. pp.87-91, ⟨10.1016/j.tsf.2012.10.134⟩. ⟨hal-00918657⟩
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