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Article Dans Une Revue Journal of Crystal Growth Année : 2013

Defects limitation in epitaxial GaP on bistepped Si surface using UHVCVD-MBE growth cluster

Nathalie Boudet
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Jean-François Bérar
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Résumé

We report on the association of Ultra High Vaccum Chemical Vapor Deposition (UHVCVD) and Molecular Beam Epitaxy (MBE) to achieve III-V (GaP) integration on Si/Si(100) substrates. We first demonstrate that a very good flatness (0.3 nm) can be obtained when growing directly GaP on a chemically prepared Si substrate. X-ray diffraction pole figure however demonstrates that a residual amount of micro-twins originating from the hetero-interface still remains. Silicon homoepitaxial buffer layer is then optimized in the UHVCVD chamber on different Si substrates misorientation (+/-0.15-6°-off) . A flat, clean and bistepped Si surface is achieved during the homoepitaxial growth on 6°-off silicon substrates. Samples are then transferred under UHV conditions to the MBE chamber to perform GaP overgrowth. Keeping the same III-V overgrowth conditions, influence of silicon homoepitaxial buffer layer on micro-twins generation is determined quantitatively using Synchrotron X-Ray Diffraction. We finally demonstrate that growing a flat, clean and bistepped silicon buffer layer on a 6°-off substrate, and transferring it under UHV to the MBE chamber for GaP overgrowth reduces significantly the amount of anisotropic defects generated in the GaP epilayers.

Dates et versions

hal-00918659 , version 1 (13-12-2013)

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Thomas Quinci, Jithesh Kuyyalil, Thanh Tra Nguyen, Yanping Wang, Samy Almosni, et al.. Defects limitation in epitaxial GaP on bistepped Si surface using UHVCVD-MBE growth cluster. Journal of Crystal Growth, 2013, 380, pp.157-162. ⟨10.1016/j.jcrysgro.2013.05.022⟩. ⟨hal-00918659⟩
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