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Article Dans Une Revue Journal of Display Technology Année : 2013

Dynamic and Transient Analysis of Silicon-Based Thin-Film Transistors: Channel Propagation Model

J.W. Jin
  • Fonction : Auteur
J.C. Vanel
  • Fonction : Auteur
D. Daineka
  • Fonction : Auteur
Y. Bonnassieux
  • Fonction : Auteur

Résumé

The quasi-static approach in the dynamic modeling considers that a thin-film transistor (TFT) reaches the steady-state instantaneously, and how to insert its behavior before steady-state is an important issue. In this paper, dynamic responses of silicon-based TFTs under gate-voltage pulse are studied in details. We experimentally distinguish quasi-static and non-quasi-static cases and we identify two charging regimes of the channel formation: channel propagation and charging of the fully propagated channel. We propose a model for the channel propagation, with a compact model-like approach to take into account the effect of defect states.
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Dates et versions

hal-00959075 , version 1 (13-03-2014)

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Citer

J.W. Jin, J.C. Vanel, D. Daineka, Tayeb Mohammed-Brahim, Y. Bonnassieux. Dynamic and Transient Analysis of Silicon-Based Thin-Film Transistors: Channel Propagation Model. Journal of Display Technology, 2013, 9 (11), pp.871-876. ⟨10.1109/jdt.2013.2250912⟩. ⟨hal-00959075⟩
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