Theoretical study of optical properties of anti phase domains in GaP

Eric Tea (1) , J. Vidal (2) , Laurent Pedesseau (1) , Charles Cornet (1) , Jean-Marc Jancu (1) , Jacky Even (1) , Sana Laribi (2) , Jean Francois Guillemoles (2) , Olivier Durand (1)

1 FOTON - Fonctions Optiques pour les Technologies de l'informatiON
2 IRDEP - Institut de Recherche et Développement sur l'Energie Photovoltaïque

III-V/Si heterostructures are currently investigated for silicon photonics and solar energy conversion. In particular, dilute nitride alloy GaAsPN grown on a GaP/Si platform exhibits lattice match with Si and an optimal band gap configuration for tandem solar cell devices. However, monolithic "coherent" growth of the GaP thin layer on Si suffers from the nucleation of extended structural defects, which can hamper device operation as well as the GaP/Si interface level and through their propagation inside the overall heterostructure. However, the effect of such structural defects on optical and transport properties is actually not well understood in details. In this letter, we investigate the anti phase domains defect (also called inversion domains) by means of ab initio calculations giving insights into the alteration of optical and transport properties of GaP due to the defective GaP/Si interface.

Mots clés: III-V semiconductors; Photonic bandgap materials; Solar cells; Wave functions; Optical properties

Domaines: Optique / photonique

Eric Tea, J. Vidal, Laurent Pedesseau, Charles Cornet, Jean-Marc Jancu, et al.. Theoretical study of optical properties of anti phase domains in GaP. Journal of Applied Physics, 2014, 115 (6), pp.063502. ⟨10.1063/1.4864421⟩. ⟨hal-00979596⟩