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Article Dans Une Revue IEEE Journal of Quantum Electronics Année : 2014

Enhanced Dynamic Performance of Quantum Dot Semiconductor Lasers Operating on the Excited State

Résumé

The modulation dynamics and the linewidth enhancement factor of excited-state (ES) lasing quantum dot (QD) semiconductor lasers are investigated through a set of improved rate equation model, in which the contribution of off-resonant states to the refractive index change is taken into account. The ES laser exhibits a broader modulation response associated with a much lower chirp-to-power ratio in comparison with the ground-state (GS) lasing laser. In addition, it is found that the laser emission in ES reduces the linewidth enhancement factor of QD lasers by about 40% than that in GS. These properties make the ES lasing devices, especially InAs/InP ones emitting at 1.55 μm, more attractive for direct modulation in high-speed optical communication systems.
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Dates et versions

hal-01076769 , version 1 (23-10-2014)

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Citer

Cheng Wang, Benjamin Lingnau, Kathy Lüdge, Jacky Even, Frédéric Grillot. Enhanced Dynamic Performance of Quantum Dot Semiconductor Lasers Operating on the Excited State . IEEE Journal of Quantum Electronics, 2014, 50 (9), pp.723 - 731. ⟨10.1109/JQE.2014.2335811⟩. ⟨hal-01076769⟩
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