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Journal articles
Microstructure and Mechanical Properties of a-CN x Films Prepared by Bias Voltage Assisted PLD with Carbon Nitride Target
Abstract : Amorphous carbon nitride (a-CN x) films were deposited on silicon substrates using pulsed laser deposition technique (PLD) with a carbon nitride target and a negative bias voltage up to -120 V. The microstructure, chemical composition, bonding configuration and mechanical properties of the films were characterized by using scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, nanoindentation and ball-on-disc abrasion test. The results show that the negative bias voltage promotes the formation of sp 3 hybridization bonding and leads to a great improvement of nitrogen content (up to 38 at.%) in the films. With an increasing bias voltage from -40 V to -120 V, the nitrogen content and the fraction of sp 3 hybridization bonding Corresponding author.
Cited literature [12 references]
https://hal-univ-rennes1.archives-ouvertes.fr/hal-01088708
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Submitted on : Friday, November 28, 2014 - 2:31:10 PM
Last modification on : Wednesday, January 13, 2021 - 3:12:59 AM
Long-term archiving on: : Friday, April 14, 2017 - 11:03:54 PM
Contributor : Admin Hal Ur1 <>
Submitted on : Friday, November 28, 2014 - 2:31:10 PM
Last modification on : Wednesday, January 13, 2021 - 3:12:59 AM
Long-term archiving on: : Friday, April 14, 2017 - 11:03:54 PM
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