Polysilicon nanowires FET as highly-sensitive pH-sensor: modeling and measurements

Anne-Claire Salaün (1) , Laurent Pichon (1) , Gertrude Wenga (1)

1 IETR - Institut d'Electronique et de Télécommunications de Rennes

Silicon nanowires have several advantages, such as small size comparable to the size of molecules and high surface to volume ratio. Polycrystalline silicon nanowire based field effect transistors (poly-SiNW FETs) are used as ultrasensitive electronic sensors for pH detection. They are fabricated using a top down approach with simple and low cost fabrication process. Modeling of Metal-Insulator-polysilicon Nanowires (MINW) structure capacitor is performed to estimate the distribution of carrier concentration in the channel. Simulations highlight the effect of positive and negative charges at nanowire–electrolyte interface. Experimental characteristics according to different pH are presented, showing high sensitivity and correlate the modeling

Mots clés: pH; Low-cost silicon nanowires devices; CMOS compatible; sensitivity

Domaines: Micro et nanotechnologies/Microélectronique

Anne-Claire Salaün, Laurent Pichon, Gertrude Wenga. Polysilicon nanowires FET as highly-sensitive pH-sensor: modeling and measurements . Procedia Engineering, 2014, EUROSENSORS 2014, the 28th European Conference on Solid-State Transducers, 87, pp.911-917. ⟨10.1016/j.proeng.2014.11.303⟩. ⟨hal-01113252⟩