Alkyl monolayers covalently bonded to silicon surfaces, Journal of the American Chemical Society, vol.115, issue.26, p.12631, 1993. ,
DOI : 10.1021/ja00079a071
-Alkanethiolate Monolayers on GaAs(001), ACS Nano, vol.1, issue.1, p.30, 2007. ,
DOI : 10.1021/nn7000596
URL : https://hal.archives-ouvertes.fr/hal-00904404
Szunerits, J. Solid State Electrochem, vol.12, p.1205, 2008. ,
11 A. Ulman, Langmuir Chem. Rev, vol.26, issue.96, p.1533, 1996. ,
SH self-assembled on Au(111), Physical Review Letters, vol.70, issue.16, p.2447, 1993. ,
DOI : 10.1103/PhysRevLett.70.2447
Molecular relaxation dynamics in organic monolayer junctions, Physical Review B, vol.82, issue.12, p.125436, 2010. ,
DOI : 10.1103/PhysRevB.82.125436
URL : https://hal.archives-ouvertes.fr/hal-00548968
Molecular Dynamics Study of Naturally Occurring Defects in Self-Assembled Monolayer Formation, ACS Nano, vol.4, issue.2, p.921, 2010. ,
DOI : 10.1021/nn901821h
The Importance of Chemical Bonding to the Contact for Tunneling through Alkyl Chains, The Journal of Physical Chemistry B, vol.106, issue.40, p.10432, 2002. ,
DOI : 10.1021/jp026324m
Molecular Passivation of Mercury???Silicon (p-type) Diode Junctions:?? Alkylation, Oxidation, and Alkylsilation, The Journal of Physical Chemistry B, vol.107, issue.31, p.7803, 2003. ,
DOI : 10.1021/jp034791d
1-octadecene monolayers on Si(111) hydrogen-terminated surfaces: Effect of substrate doping, Journal of Applied Physics, vol.96, issue.3, p.1529, 2004. ,
DOI : 10.1063/1.1767984
URL : https://hal.archives-ouvertes.fr/hal-00140729
How Do Electronic Carriers Cross Si-Bound Alkyl Monolayers?, Physical Review Letters, vol.95, issue.26, p.266807, 2005. ,
DOI : 10.1103/PhysRevLett.95.266807
URL : http://arxiv.org/abs/cond-mat/0509640
Importance of Monolayer Quality for Interpreting Current Transport through Organic Molecules:?? Alkyls on Oxide-Free Si, Langmuir, vol.22, issue.16, p.6915, 2006. ,
DOI : 10.1021/la060718d
Electronic structure of Si(111)-bound alkyl monolayers: Theory and experiment, Physical Review B, vol.74, issue.16, p.165323, 2006. ,
DOI : 10.1103/PhysRevB.74.165323
tunnel current noise through Si-bound alkyl monolayers, Physical Review B, vol.76, issue.20, p.205407, 2007. ,
DOI : 10.1103/PhysRevB.76.205407
URL : https://hal.archives-ouvertes.fr/hal-00284522
Analyzing Molecular Current-Voltage Characteristics with the Simmons Tunneling Model:??? Scaling and Linearization, The Journal of Physical Chemistry C, vol.111, issue.11, p.4431, 2007. ,
DOI : 10.1021/jp066846s
What is the Barrier for Tunneling Through Alkyl Monolayers? Results from n- and p-Si???Alkyl/Hg Junctions, Advanced Materials, vol.110, issue.3, p.445, 2007. ,
DOI : 10.1002/adma.200601729
Electron Transport Properties and Dielectric Breakdown of Alkyl Monolayers Chemisorbed on a Highly Doped n-Type Si(111) Surface, Japanese Journal of Applied Physics, vol.48, issue.5, p.55003, 2009. ,
DOI : 10.1143/JJAP.48.055003
Hg/Molecular Monolayer???Si Junctions: Electrical Interplay between Monolayer Properties and Semiconductor Doping Density, The Journal of Physical Chemistry C, vol.114, issue.22, p.10270, 2010. ,
DOI : 10.1021/jp101656t
URL : http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.179.1774
Relaxation dynamics in covalently bonded organic monolayers on silicon, Physical Review B, vol.82, issue.3, p.35404, 2010. ,
DOI : 10.1103/PhysRevB.82.035404
URL : https://hal.archives-ouvertes.fr/hal-00548973
Tunnel barrier parameters derivation from normalized differential conductance in Hg/organic monomolecular layer-Si junctions, Applied Physics Letters, vol.97, issue.13, p.132105, 2010. ,
DOI : 10.1063/1.3493650
URL : https://hal.archives-ouvertes.fr/hal-00914851
The explanation of barrier height inhomogeneities in Au/n-Si Schottky barrier diodes with organic thin interfacial layer, Journal of Applied Physics, vol.108, issue.6, p.64506, 2010. ,
DOI : 10.1063/1.3468376
Odd???Even Effects in Charge Transport across Self-Assembled Monolayers, Journal of the American Chemical Society, vol.133, issue.9, p.2962, 2011. ,
DOI : 10.1021/ja1090436
Temperature dependence of current density and admittance in metal-insulator-semiconductor junctions with molecular insulator, Journal of Applied Physics, vol.110, issue.8, p.83708, 2011. ,
DOI : 10.1063/1.3651401
URL : https://hal.archives-ouvertes.fr/hal-00658315
Role of Hydration on the Electronic Transport through Molecular Junctions on Silicon, The Journal of Physical Chemistry C, vol.116, issue.33, p.17753, 2012. ,
DOI : 10.1021/jp3018106
URL : https://hal.archives-ouvertes.fr/hal-00787370
Effect of high current density on the admittance response of interface states in ultrathin MIS tunnel junctions, Solid-State Electronics, vol.80 ,
DOI : 10.1016/j.sse.2012.10.012
URL : https://hal.archives-ouvertes.fr/hal-00815698
Exploring the Tilt-Angle Dependence of Electron Tunneling across Molecular Junctions of Self-Assembled Alkanethiols, ACS Nano, vol.3, issue.8, p.2073, 2009. ,
DOI : 10.1021/nn9000808
Measurement and Statistical Analysis of Single-Molecule Current???Voltage Characteristics, Transition Voltage Spectroscopy, and Tunneling Barrier Height, Journal of the American Chemical Society, vol.133, issue.47, p.19189, 2011. ,
DOI : 10.1021/ja2076857
Conductance Statistics from a Large Array of Sub-10 nm Molecular Junctions, ACS Nano, vol.6, issue.6, p.4639, 2012. ,
DOI : 10.1021/nn301850g
URL : https://hal.archives-ouvertes.fr/hal-00797676
-Si/liquid contacts, Applied Physics Letters, vol.80, issue.23, p.4458, 2002. ,
DOI : 10.1063/1.1479456
URL : https://hal.archives-ouvertes.fr/hal-00857781
Photoconductivity and spin-dependent photoconductivity of hydrosilylated (111) silicon surfaces, Applied Physics Letters, vol.82, issue.4, p.565, 2003. ,
DOI : 10.1063/1.1540732
Silicon Surface Passivation by Organic Monolayers:?? Minority Charge Carrier Lifetime Measurements and Kelvin Probe Investigations, The Journal of Physical Chemistry B, vol.107, issue.28, p.6846, 2003. ,
DOI : 10.1021/jp034314v
Study of silicon???organic interfaces by admittance spectroscopy, Applied Surface Science, vol.252, issue.11, p.3961, 2006. ,
DOI : 10.1016/j.apsusc.2005.09.029
Alkyl Monolayers on Silicon Prepared from 1-Alkenes and Hydrogen-Terminated Silicon, Journal of the American Chemical Society, vol.117, issue.11, p.3145, 1995. ,
DOI : 10.1021/ja00116a019
Comparison of the Electrical Properties and Chemical Stability of Crystalline Silicon(111) Surfaces Alkylated Using Grignard Reagents or Olefins with Lewis Acid Catalysts, The Journal of Physical Chemistry B, vol.107, issue.23, p.5404, 2003. ,
DOI : 10.1021/jp0222752
Chemical reactivity of hydrogen-terminated crystalline silicon surfaces, Current Opinion in Solid State and Materials Science, vol.9, issue.1-2, p.66, 2005. ,
DOI : 10.1016/j.cossms.2006.03.006
High-Resolution Soft X-ray Photoelectron Spectroscopic Studies and Scanning Auger Microscopy Studies of the Air Oxidation of Alkylated Silicon(111) Surfaces, The Journal of Physical Chemistry B, vol.110, issue.46, p.23450, 2006. ,
DOI : 10.1021/jp063366s
Highly Stable Organic Monolayers for Reacting Silicon with Further Functionalities: The Effect of the C???C Bond nearest the Silicon Surface, Journal of the American Chemical Society, vol.130, issue.41, p.13727, 2008. ,
DOI : 10.1021/ja804674z
Barrier height distribution and dipolar relaxation in metal-insulator-semiconductor junctions with molecular insulator: Ageing effects, Journal of Applied Physics, vol.112, issue.11, pp.113701-113749, 2012. ,
DOI : 10.1063/1.4767121
URL : https://hal.archives-ouvertes.fr/hal-01121392
Thermal grafting of organic monolayers on amorphous carbon and silicon (111) surfaces: A comparative study, Diamond and Related Materials, vol.18, issue.9, p.1074, 2009. ,
DOI : 10.1016/j.diamond.2009.01.037
URL : https://hal.archives-ouvertes.fr/hal-00404744
Long-Term Stability and Electrical Performance of Organic Monolayers on Hydrogen-Terminated Silicon, The Journal of Physical Chemistry C, vol.114, issue.24, p.10866, 2010. ,
DOI : 10.1021/jp101595w
Origin of Surface Conductivity in Diamond, Physical Review Letters, vol.85, issue.16, p.3472, 2000. ,
DOI : 10.1103/PhysRevLett.85.3472
Films on Si Investigated by Kelvin Probe Microscopy and in Situ X-ray Spectroscopies, Langmuir, vol.23, issue.19, p.9699, 2007. ,
DOI : 10.1021/la700893w
Si metal???oxide???semiconductor diodes, Journal of Applied Physics, vol.56, issue.8, p.2309, 1984. ,
DOI : 10.1063/1.334265
Atomic-structure-dependent Schottky barrier at epitaxial Pb/Si(111) interfaces, Physical Review Letters, vol.64, issue.13, p.1589, 1990. ,
DOI : 10.1103/PhysRevLett.64.1589
Electron transport of inhomogeneous Schottky barriers: A numerical study, Journal of Applied Physics, vol.70, issue.12, p.7403, 1991. ,
DOI : 10.1063/1.349737
Barrier inhomogeneities at Schottky contacts, Journal of Applied Physics, vol.69, issue.3, p.1522, 1991. ,
DOI : 10.1063/1.347243
Electron transport at metal-semiconductor interfaces: General theory, Physical Review B, vol.45, issue.23, p.13509, 1992. ,
DOI : 10.1103/PhysRevB.45.13509
Si/Si Schottky diodes, Journal of Applied Physics, vol.80, issue.1, p.288, 1996. ,
DOI : 10.1063/1.362818
Influence of the interface structure on the barrier height of homogeneous Schottky contacts, The European Physical Journal B, vol.7, issue.3, p.457, 1999. ,
DOI : 10.1007/s100510050634
Gaussian distribution of inhomogeneous barrier height in Ag/p-Si (100) Schottky barrier diodes, Applied Surface Science, vol.233, issue.1-4, p.373, 2004. ,
DOI : 10.1016/j.apsusc.2004.04.011
Temperature dependent electrical characteristics of Sn/p-Si Schottky diodes, Applied Surface Science, vol.252, issue.4, p.1153, 2005. ,
DOI : 10.1016/j.apsusc.2005.02.044
The barrier height inhomogeneity in Al/p-Si Schottky barrier diodes with native insulator layer, Applied Surface Science, vol.252, issue.22, p.7749, 2006. ,
DOI : 10.1016/j.apsusc.2005.09.046
Gaussian distribution of inhomogeneous barrier height in Al0.24Ga0.76As/GaAs structures, Physica B: Condensed Matter, vol.396, issue.1-2, p.22, 2007. ,
DOI : 10.1016/j.physb.2007.02.096
Relation for the nonequilibrium population of the interface states: Effects on the bias dependence of the ideality factor, Journal of Applied Physics, vol.81, issue.6, pp.2674-64, 1997. ,
DOI : 10.1063/1.364305
NIST Electron Inelastic-Mean-Free-Path, Database version 1, 2000. ,
Truly Quantitative XPS Characterization of Organic Monolayers on Silicon: Study of Alkyl and Alkoxy Monolayers on H???Si(111), Journal of the American Chemical Society, vol.127, issue.21, p.7871, 2005. ,
DOI : 10.1021/ja0430797
URL : https://hal.archives-ouvertes.fr/hal-00125385
MOS (Metal Oxide Semiconductor) Physics and Technology, 1982. ,
Water Exclusion at the Nanometer Scale Provides Long-Term Passivation of Silicon (111) Grafted with Alkyl Monolayers, The Journal of Physical Chemistry B, vol.110, issue.11, p.5576, 2006. ,
DOI : 10.1021/jp054825c
URL : https://hal.archives-ouvertes.fr/hal-00127062
Studies of the oxidation of iron by water vapour using X-ray photoelectron spectroscopy and QUASES???, Surface Science, vol.572, issue.2-3, p.217, 2004. ,
DOI : 10.1016/j.susc.2004.08.035
X-ray photoelectron spectroscopic characterization of ultra-thin silicon oxide films on a Mo(100) surface, Surface Science, vol.279, issue.1-2, p.119, 1992. ,
DOI : 10.1016/0039-6028(92)90748-U
Molecularly intact and dissociative adsorption of water on clean Cu(110): A comparison with the water/Ru(001) system, Surface Science, vol.585, issue.3, p.183, 2005. ,
DOI : 10.1016/j.susc.2005.04.024
Dynamics within Alkylsiloxane Self-Assembled Monolayers Studied by Sensitive Dielectric Spectroscopy, ACS Nano, vol.2, issue.11, p.2392, 2008. ,
DOI : 10.1021/nn800543j
Molecular Relaxation Dynamics of Self-Assembled Monolayers, The Journal of Physical Chemistry B, vol.110, issue.10, p.4924, 2006. ,
DOI : 10.1021/jp060259p
Glass Transition and Relaxation Processes in Supercooled Water, Physical Review Letters, vol.93, issue.24, p.245702, 2004. ,
DOI : 10.1103/PhysRevLett.93.245702
Controlling Space Charge of Oxide-Free Si by in Situ Modification of Dipolar Alkyl Monolayers, The Journal of Physical Chemistry C, vol.116, issue.21, p.11434, 2012. ,
DOI : 10.1021/jp212043v
Electron Transport through Thin Organic Films in Metal???Insulator???Metal Junctions Based on Self-Assembled Monolayers, Journal of the American Chemical Society, vol.123, issue.21, pp.5075-5085, 2001. ,
DOI : 10.1021/ja004055c
Barrier height distribution and dipolar relaxation in metal-insulator-semiconductor junctions with molecular insulator: Ageing effects, Journal of Applied Physics, vol.112, issue.11, p.113701, 2012. ,
DOI : 10.1063/1.4767121
URL : https://hal.archives-ouvertes.fr/hal-01121392