Sb surfactant mediated growth of InAs/AlAs0.56Sb0.44 strained quantum well for intersubband absorption at 1.55 μm - Université de Rennes Accéder directement au contenu
Article Dans Une Revue Applied Physics Letters Année : 2015

Sb surfactant mediated growth of InAs/AlAs0.56Sb0.44 strained quantum well for intersubband absorption at 1.55 μm

Résumé

Surfactant mediated growth of strained InAs/AlAs0.56 Sb 0.44 quantum wells on InP (001) substrate is investigated. X ray diffraction and transmission electron microscopy analysis reveal that the supply of antimony on InAs surface delays the 2D to 3D growth transition and allows the growth of thick InAs/AlAsSb quantum wells. Quantum well as thick as 7 ML, without defect was achieved by Sb surfactant mediated growth. Further high resolution transmission electron microscopy measurement and geometric phase analysis show that InAs/AlAsSb interfaces are not abrupt. At InAs on AlAsSb interface, the formation of a layer presenting lattice parameter lower than InP leads to a tensile stress. From energetic consideration, the formation of As rich AlAsSb layer at interface is deduced. At AlAsSb on InAs interface, a compressive layer is formed. The impact on optical properties and the chemical composition of this layer are discussed from microscopic analysis and photoluminescence experiments.
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Dates et versions

hal-01140104 , version 1 (05-03-2018)

Identifiants

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Yu Zhao, Julien Nicolaï, Nicolas Bertru, Hervé Folliot, Mathieu Perrin, et al.. Sb surfactant mediated growth of InAs/AlAs0.56Sb0.44 strained quantum well for intersubband absorption at 1.55 μm. Applied Physics Letters, 2015, 106 (8), pp.081908. ⟨10.1063/1.4913845⟩. ⟨hal-01140104⟩
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