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Communication Dans Un Congrès Année : 2013

InP/InGaAsP Heterostructures for Hot Carrier Solar Cells (HCSC)

Résumé

We investigated a semiconductor heterostructure based on InGaAsP multi quantum wells using optical and electrical characterizations. The optical analysis allows us to probe the potential of such a structure in the scope of hot carrier solar cell device. Using different photoluminescence techniques, the quasi Fermi level splitting Δμ is estimated as a function of the excitation power. High value of Δμ is found as well as high carrier temperature. These results are compared to electrical measurements.
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Dates et versions

hal-01166800 , version 1 (23-06-2015)

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Jean Rodière, Laurent Lombez, Jean-Francois Guillemoles, Hervé Folliot, Olivier Durand. InP/InGaAsP Heterostructures for Hot Carrier Solar Cells (HCSC). 28th European Photovoltaic Solar Energy Conference (EU PVSEC 2013), Sep 2013, Paris, France. pp.127-128, ⟨10.4229/28thEUPVSEC2013-1DO.4.3⟩. ⟨hal-01166800⟩
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