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Communication Dans Un Congrès Année : 2013

Systematic investigation of the temperature behavior of InAs/InP quantum nanostructure passively mode-locked lasers

Résumé

This paper aims to investigate the effects of the temperature on the mode-locking capability of two section InAs/InP quantum nanostructure (QN) passively mode locked lasers. Devices are made with multi-layers of self-assembled InAs QN either grown on InP(100) (5 quantum dashes (QDashes) layers) or on InP (311)B (6 quantum dots (QDs) layers). Using an analytical model, the mode-locking stability map is extracted for the two types of QN as a function of optical absorption, cavity length, current density and temperature. We believe that this study is of first importance since it reports for the first time a systematic investigation of the temperature-dependence on the mode-locking properties of InAs/InP QN devices. Beside, a rigorous comparison between QDashes and QDs temperature dependence is proposed through a proper analysis of the mode-locking stability maps. Experimental results also show that under some specific conditions the mode-locking operation can be temperature independent.
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Dates et versions

hal-01167250 , version 1 (24-06-2015)

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Kamil Klaime, Rozenn Piron, Frederic Grillot, Madhoussoudhana Dontabactouny, Slimane Loualiche, et al.. Systematic investigation of the temperature behavior of InAs/InP quantum nanostructure passively mode-locked lasers. SPIE Photonics West - OPTO 2013, Feb 2013, San Francisco, United States. pp.863407, ⟨10.1117/12.2005244⟩. ⟨hal-01167250⟩
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