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Extended semiconducting behaviour of Ba0.85Sr0.15Ti0.9Fe0.1O3 thick films in large temperature range

Abstract : Ba0.85Sr0.15Ti0.9Fe0.1O3 (BSTF) powder has been synthesized by solid-state reaction in aim to develop lead-free semiconductor gas sensors. Thick BSTF films were therefore deposited on alumina substrates coated by silver–palladium (Ag–Pd) bottom electrodes and then sintered at 1100 °C for 2 h. These films were physically and electrically characterized. The dielectric constant, loss tangent and conductivity evolutions were investigated in extended frequency and temperature ranges and compared to results given by a non doped barium titanate thick film. A huge increase of the BSTF conductivity variation, by a factor of 10,000 at low frequency when the temperature ranges from 25 to 500 °C, was observed. This behaviour, associated to a relaxation mechanism governed by the migration of oxygen vacancies, has led to a drastic change of the BSTF conductivity.
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https://hal-univ-rennes1.archives-ouvertes.fr/hal-01231162
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Submitted on : Thursday, November 19, 2015 - 3:47:10 PM
Last modification on : Thursday, March 5, 2020 - 2:04:52 PM

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M. A. El Romeh, D. Fasquelle, S. Députier, M. Mascot, Maryline Guilloux-Viry. Extended semiconducting behaviour of Ba0.85Sr0.15Ti0.9Fe0.1O3 thick films in large temperature range. Journal of Materials Science: Materials in Electronics, Springer Verlag, 2016, 27 (2), pp.2096-2102. ⟨10.1007/s10854-015-3996-x⟩. ⟨hal-01231162⟩

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