Extended semiconducting behaviour of Ba0.85Sr0.15Ti0.9Fe0.1O3 thick films in large temperature range - Université de Rennes Accéder directement au contenu
Article Dans Une Revue Journal of Materials Science: Materials in Electronics Année : 2016

Extended semiconducting behaviour of Ba0.85Sr0.15Ti0.9Fe0.1O3 thick films in large temperature range

Résumé

Ba0.85Sr0.15Ti0.9Fe0.1O3 (BSTF) powder has been synthesized by solid-state reaction in aim to develop lead-free semiconductor gas sensors. Thick BSTF films were therefore deposited on alumina substrates coated by silver–palladium (Ag–Pd) bottom electrodes and then sintered at 1100 °C for 2 h. These films were physically and electrically characterized. The dielectric constant, loss tangent and conductivity evolutions were investigated in extended frequency and temperature ranges and compared to results given by a non doped barium titanate thick film. A huge increase of the BSTF conductivity variation, by a factor of 10,000 at low frequency when the temperature ranges from 25 to 500 °C, was observed. This behaviour, associated to a relaxation mechanism governed by the migration of oxygen vacancies, has led to a drastic change of the BSTF conductivity.

Domaines

Chimie
Fichier non déposé

Dates et versions

hal-01231162 , version 1 (19-11-2015)

Identifiants

Citer

M. A. El Romeh, S. Députier, Maryline Guilloux-Viry, Didier Fasquelle, Manuel Mascot. Extended semiconducting behaviour of Ba0.85Sr0.15Ti0.9Fe0.1O3 thick films in large temperature range. Journal of Materials Science: Materials in Electronics, 2016, 27 (2), pp.2096-2102. ⟨10.1007/s10854-015-3996-x⟩. ⟨hal-01231162⟩
81 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More