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Electrical properties of self-aligned gate-all-around polycrystalline silicon nanowires field effect transistors

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https://hal-univ-rennes1.archives-ouvertes.fr/hal-01240772
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Submitted on : Friday, January 22, 2016 - 4:20:07 PM
Last modification on : Monday, October 5, 2020 - 9:50:23 AM
Long-term archiving on: : Saturday, April 23, 2016 - 11:00:36 AM

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Brice Le Borgne, Anne-Claire Salaün, Laurent Pichon. Electrical properties of self-aligned gate-all-around polycrystalline silicon nanowires field effect transistors. Microelectronic Engineering, Elsevier, 2016, 150, pp.32-38. ⟨10.1016/j.mee.2015.11.001⟩. ⟨hal-01240772⟩

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