Electrical properties of self-aligned gate-all-around polycrystalline silicon nanowires field effect transistors

Brice Le Borgne (1) , Anne-Claire Salaün (1) , Laurent Pichon (1)

1 IETR - Institut d'Électronique et des Technologies du numéRique

Mots clés: CMOS technology; Gate-all-around; Mosfet; Polycrystalline silicon; Si-nanowires

Domaines: Electronique; Réseaux et télécommunications [cs.NI]

Brice Le Borgne, Anne-Claire Salaün, Laurent Pichon. Electrical properties of self-aligned gate-all-around polycrystalline silicon nanowires field effect transistors. Microelectronic Engineering, 2016, 150, pp.32-38. ⟨10.1016/j.mee.2015.11.001⟩. ⟨hal-01240772⟩