J. Hu, C. R. Menyuk, C. Wei, B. Shaw, J. S. Sanghera et al., Highly efficient cascaded amplification using Pr^3+-doped mid-infrared chalcogenide fiber amplifiers, Optics Letters, vol.40, issue.16, pp.3687-3690, 2015.
DOI : 10.1364/OL.40.003687

B. G. Aitken, C. W. Ponader, and R. S. Quimby, Clustering of rare earths in GeAs sulfide glass, Comptes Rendus Chimie, vol.5, issue.12, pp.865-872, 2002.
DOI : 10.1016/S1631-0748(02)01458-3

Z. Tang, N. C. Neate, D. Furniss, S. Sujecki, T. M. Benson et al., Crystallization behavior of Dy3+-doped selenide glasses, Journal of Non-Crystalline Solids, vol.357, issue.11-13, pp.2453-2462, 2011.
DOI : 10.1016/j.jnoncrysol.2010.11.065

C. Liu, G. Tang, L. Luo, and W. Chen, -CsI Glasses for Fabricating Infrared Transmitting Glass-Ceramics, Journal of the American Ceramic Society, vol.65, issue.[13], pp.245-248, 2009.
DOI : 10.1111/j.1551-2916.2008.02832.x
URL : https://hal.archives-ouvertes.fr/tel-00259428

O. Shpotyuk, L. Calvez, E. Petracovschi, H. Klym, A. Ingram et al., Thermally-induced crystallization behaviour of 80GeSe2???20Ga2Se3 glass as probed by combined X-ray diffraction and PAL spectroscopy, Journal of Alloys and Compounds, vol.582, pp.323-327, 2014.
DOI : 10.1016/j.jallcom.2013.07.127

O. Shpotyuk and J. Filipecki, Free volume in vitreous chalcogenide semiconductors: possibilities of positron annihilation lifetime study, 2003.

B. Jasinska, A. L. Dawidowicz, T. Goworek, and S. Radkiewicz, Processes during liquation of Vycor glass studied by positron annihilation lifetime spectroscopy, Physical Chemistry Chemical Physics, vol.2, issue.14, pp.3269-3274, 2000.
DOI : 10.1039/b002499f

V. P. Shantarovich, Positron annihilation and free volume studies in polymer glasses, Journal of Polymer Science Part B: Polymer Physics, vol.16, issue.23, pp.2485-2503, 2008.
DOI : 10.1002/polb.21602

S. Danto, P. Houizot, C. Boussard-pledel, X. Zhang, F. Smektala et al., A Family of Far-Infrared-Transmitting Glasses in the Ga???Ge???Te System for Space Applications, Advanced Functional Materials, vol.125, issue.327, pp.1847-1852, 2006.
DOI : 10.1002/adfm.200500645
URL : https://hal.archives-ouvertes.fr/hal-00867501

R. Krause-rehberg and H. Leipner, Positron annihilation in semiconductors: defect studies, 1999.
DOI : 10.1007/978-3-662-03893-2

F. Tuomisto and I. Makkonen, Defect identification in semiconductors with positron annihilation: Experiment and theory, Reviews of Modern Physics, vol.85, issue.4, pp.1583-1631, 2013.
DOI : 10.1103/RevModPhys.85.1583

A. Seeger, The study of defects in crystals by positron annihilation, Applied Physics, vol.34, issue.3, pp.183-199, 1974.
DOI : 10.1007/BF00884229

M. Shpotyuk, A. Ingram, and O. Shpotyuk, Abstract, Journal of Materials Research, vol.345, issue.09, pp.1422-1429, 2015.
DOI : 10.1016/j.jnoncrysol.2010.04.018

K. O. Jensen, P. S. Salmon, I. T. Penfold, and P. G. Coleman, Microvoids in chalcogenide glasses studied by positron annihilation, Journal of Non-Crystalline Solids, vol.170, issue.1, pp.57-64, 1994.
DOI : 10.1016/0022-3093(94)90103-1

A. Ingram, R. Golovchak, M. Kostrzewa, S. Wacke, M. Shpotyuk et al., Compositional dependences of average positron lifetime in binary As???S/Se glasses, Physica B: Condensed Matter, vol.407, issue.4, pp.652-655, 2012.
DOI : 10.1016/j.physb.2011.11.052

O. Shpotyuk, R. Golovchak, A. Ingram, V. Boyko, and L. Shpotyuk, Comparative study of extended free-volume defects in As- and Ge-based glassy semiconductors: theoretical prediction and experimental probing with PAL technique, physica status solidi (c), vol.10, issue.1, pp.117-120, 2013.
DOI : 10.1002/pssc.201200405

O. Shpotyuk, J. Filipecki, M. Shpotyuk, and A. Ingram, Free volume evolution in chalcogenide glasses as probed by PAL spectroscopy, Solid State Ionics, vol.267, pp.38-43, 2014.
DOI : 10.1016/j.ssi.2014.09.008

O. Shpotyuk, A. Ingram, M. Shpotyuk, and J. Filipecki, Prediction of free-volume-type correlations in glassy chalcogenides from positron annihilation lifetime measurements, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol.338, pp.66-71, 2014.
DOI : 10.1016/j.nimb.2014.08.009

M. Kastner, Compositional Trends in the Optical Properties of Amorphous Lone-Pair Semiconductors, Physical Review B, vol.7, issue.12, pp.5237-5252, 1973.
DOI : 10.1103/PhysRevB.7.5237

L. Pauling, The Nature of the Chemical Bond. V, The Journal of Chemical Physics, vol.2, issue.8, 1960.
DOI : 10.1063/1.1749514

R. Krause-rehberg, H. S. Leipner, T. Algarjan, and A. , Review of defect investigations by means of positron annihilation in II-VI compound semiconductors, Applied Physics A: Materials Science & Processing, vol.66, issue.6, pp.599-614, 1998.
DOI : 10.1007/s003390050721

A. Feltz, Amorphous and vitreous inorganic solids, 1986.

P. Jovari, I. Kaban, B. Bureau, A. Wilhelm, P. Lucas et al., Structure of Te-rich Te???Ge???X (X = I, Se, Ga) glasses, Journal of Physics: Condensed Matter, vol.22, issue.40, pp.404207-404208, 2010.
DOI : 10.1088/0953-8984/22/40/404207
URL : https://hal.archives-ouvertes.fr/hal-00608648