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Intrinsic interface states in InAs–AlSb heterostructures

Abstract : We examine the formation of intrinsic interface states bound to the plane of In–Sb chemical bonds at InAs–AlSb interfaces. Careful parameterization of the bulk materials in the frame of the extended-basis spds * tight-binding model and recent progress in predictions of band offsets severely limit the span of tight-binding parameters describing this system. We find that a heavy-hole-like interface state bound to the plane of In–Sb bonds exists for a large range of values of the InSb–InAs band offset
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https://hal-univ-rennes1.archives-ouvertes.fr/hal-01273049
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Submitted on : Thursday, February 11, 2016 - 5:14:37 PM
Last modification on : Tuesday, July 14, 2020 - 11:04:06 AM

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F. Raouafi, R. Benchamekh, M. O. Nestoklon, Jean-Marc Jancu, P. Voisin. Intrinsic interface states in InAs–AlSb heterostructures. Journal of Physics: Condensed Matter, IOP Publishing, 2016, 28 (4), pp.045001. ⟨10.1088/0953-8984/28/4/045001⟩. ⟨hal-01273049⟩

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