Intrinsic interface states in InAs–AlSb heterostructures
Abstract
We examine the formation of intrinsic interface states bound to the plane of In–Sb chemical bonds at InAs–AlSb interfaces. Careful parameterization of the bulk materials in the frame of the extended-basis spds * tight-binding model and recent progress in predictions of band offsets severely limit the span of tight-binding parameters describing this system. We find that a heavy-hole-like interface state bound to the plane of In–Sb bonds exists for a large range of values of the InSb–InAs band offset