Skip to Main content Skip to Navigation
Journal articles

Characterisation and analytical modeling of GaN HEMT-based varactor diodes

Abstract : Varactor diodes fabricated in 0.5 and 0.15 μm GaN HEMT (high-electron-mobility transistor) processes are modelled. The devices were characterised via DC and RF small-signal measurements up to 20 GHz, and fitted to a simple physical equivalent circuit. Approximate analytical expressions containing empirical coefficients are introduced for the voltage dependency of capacitance and series resistance. The analytical solutions agree remarkably well with the experimentally extracted C-V curves and can be used as a general model to represent the nonlinear behaviour of GaN-based varactors devices.
Complete list of metadatas

Cited literature [3 references]  Display  Hide  Download

https://hal-univ-rennes1.archives-ouvertes.fr/hal-01300890
Contributor : Laurent Jonchère <>
Submitted on : Tuesday, May 3, 2016 - 11:49:21 AM
Last modification on : Tuesday, October 6, 2020 - 3:09:45 AM
Long-term archiving on: : Tuesday, May 24, 2016 - 6:27:30 PM

File

Characterisation and analytica...
Files produced by the author(s)

Identifiers

Citation

Abdelaziz Hamdoun, L. Roy, Mohamed Himdi, Olivier Lafond. Characterisation and analytical modeling of GaN HEMT-based varactor diodes. Electronics Letters, IET, 2015, 51 (23), pp.1930-1932. ⟨10.1049/el.2015.2362⟩. ⟨hal-01300890⟩

Share

Metrics

Record views

420

Files downloads

285