Characterisation and analytical modeling of GaN HEMT-based varactor diodes

Abdelaziz Hamdoun (1) , L. Roy (1) , Mohamed Himdi (2) , Olivier Lafond (2)

1 Carleton University
2 IETR - Institut d'Électronique et des Technologies du numéRique

Varactor diodes fabricated in 0.5 and 0.15 μm GaN HEMT (high-electron-mobility transistor) processes are modelled. The devices were characterised via DC and RF small-signal measurements up to 20 GHz, and fitted to a simple physical equivalent circuit. Approximate analytical expressions containing empirical coefficients are introduced for the voltage dependency of capacitance and series resistance. The analytical solutions agree remarkably well with the experimentally extracted C-V curves and can be used as a general model to represent the nonlinear behaviour of GaN-based varactors devices.

Mots clés: equivalent circuits; gallium compounds; GaN; HEMT based varactor diodes; high electron mobility transistors; III-V semiconductors; microwave diodes; microwave field effect transistors; physical equivalent circuit; size 0.5 mum; size 0.15 mum; small signal measurements; varactors; wide band gap semiconductors

Domaines: Electronique; Réseaux et télécommunications [cs.NI]

Abdelaziz Hamdoun, L. Roy, Mohamed Himdi, Olivier Lafond. Characterisation and analytical modeling of GaN HEMT-based varactor diodes. Electronics Letters, 2015, 51 (23), pp.1930-1932. ⟨10.1049/el.2015.2362⟩. ⟨hal-01300890⟩