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Thermal induced structural evolution and performance of Cu2ZnSnSe4 thin films prepared by a simple route of ion-beam sputtering deposition

Abstract : In this work, a simple method for fabricating Cu2ZnSnSe4 (CZTSe) thin film by ion-beam sputtering without post-selenization is proposed. The influence of annealing temperature on the composition, the micro-structure, the morphology, the electrical and optical properties of CZTSe thin films has been established. The relatively low annealing temperature of 400 °C is considered as very positive for obtaining the optimized Cu-poor and Zn-rich CZTSe films with pure CZTSe phase, high crystallinity, P-type conduction and ideal optical band-gap. These interesting features have been used in the prototype photovoltaic devices with a conversion efficiency of 4.67%. These are the first results concerning the use of ion-beam sputtering CZTSe films for photovoltaic application and further improvement of device performance is expected. © 2016 Elsevier Ltd
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https://hal-univ-rennes1.archives-ouvertes.fr/hal-01367231
Contributor : Laurent Jonchère <>
Submitted on : Thursday, September 15, 2016 - 5:17:39 PM
Last modification on : Thursday, March 5, 2020 - 2:06:28 PM

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G.-X. Liang, P. Fan, J.-G. Hu, J. Zhao, X.-H. Zhang, et al.. Thermal induced structural evolution and performance of Cu2ZnSnSe4 thin films prepared by a simple route of ion-beam sputtering deposition. Solar Energy, Elsevier, 2016, 136, pp.650--658. ⟨10.1016/j.solener.2016.07.047⟩. ⟨hal-01367231⟩

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