Thermal induced structural evolution and performance of Cu2ZnSnSe4 thin films prepared by a simple route of ion-beam sputtering deposition

G.-X. Liang (1) , P. Fan (1) , J.-G. Hu (1) , J. Zhao (1) , X.-H. Zhang (2) , Z.-K. Luo (1) , H.-L. Ma (2) , J.-T. Luo (1) , Z.-H. Zheng (1) , D.-P. Zhang (1)

1 Shenzhen University
2 ISCR - Institut des Sciences Chimiques de Rennes

In this work, a simple method for fabricating Cu2ZnSnSe4 (CZTSe) thin film by ion-beam sputtering without post-selenization is proposed. The influence of annealing temperature on the composition, the micro-structure, the morphology, the electrical and optical properties of CZTSe thin films has been established. The relatively low annealing temperature of 400 °C is considered as very positive for obtaining the optimized Cu-poor and Zn-rich CZTSe films with pure CZTSe phase, high crystallinity, P-type conduction and ideal optical band-gap. These interesting features have been used in the prototype photovoltaic devices with a conversion efficiency of 4.67%. These are the first results concerning the use of ion-beam sputtering CZTSe films for photovoltaic application and further improvement of device performance is expected. © 2016 Elsevier Ltd

Mots clés: Chalcogenides; Copper; Deposition; Energy gap; Ions; Optical properties; Sputtering; Thin films; Annealing temperatures; Electrical and optical properties; Ion beam sputtering deposition; Ion-beam sputtering; Photovoltaic; Photovoltaic applications; Photovoltaic devices; Structural evolution; Ion beams

Domaines: Chimie

G.-X. Liang, P. Fan, J.-G. Hu, J. Zhao, X.-H. Zhang, et al.. Thermal induced structural evolution and performance of Cu2ZnSnSe4 thin films prepared by a simple route of ion-beam sputtering deposition. Solar Energy, 2016, 136, pp.650--658. ⟨10.1016/j.solener.2016.07.047⟩. ⟨hal-01367231⟩