Characterization of in-situ doped polycrystalline silicon using Schottky diodes and admittance spectroscopy

H. Ayed (1) , L. Béchir (1) , M. Benabdesslem (1) , N. Benslim (1) , L. Mahdjoubi (1) , T. Mohammed-Brahim (2) , A. Hafdallah (3) , M.S. Aida (3)

1 LESIMS - Institute of Physics
2 IETR - Institut d'Électronique et des Technologies du numéRique
3 Laboratoire des Couches Minces et Interfaces

In this work, Schottky Au-Polycrystalline silicon diodes are successfully realised. The barrier height is around ФB = 0.74 eV as determined from Capacitance - Bias (C-V) characteristics. The depth profile of the apparent doping is deduced from these measurements. Its behaviour leads to the experimental profile. Moreover, the diode admittance measurements versus the frequency and the temperature at different biases show the possibility to use this device to characterise the electrical quality of the polycrystalline silicon. © 2016 Sumy State University.

Domaines: Réseaux et télécommunications [cs.NI]; Electronique

H. Ayed, L. Béchir, M. Benabdesslem, N. Benslim, L. Mahdjoubi, et al.. Characterization of in-situ doped polycrystalline silicon using Schottky diodes and admittance spectroscopy. Journal of Nano and Electronic Physics, 2016, 8, pp.01038. ⟨hal-01368124⟩