Structural and optical properties of RF-biased PECVD TiO2 thin films deposited in an O2/TTIP helicon reactor - Archive ouverte HAL Access content directly
Journal Articles Vacuum Year : 2016

Structural and optical properties of RF-biased PECVD TiO2 thin films deposited in an O2/TTIP helicon reactor

D. Li
  • Function : Author
A. Granier
  • Function : Author
Y. Zhang
  • Function : Author
Jean-Pierre Landesman

Abstract

TiO2 thin films are deposited from oxygen/titanium tetraisopropoxide inductively coupled radiofrequency plasmas at low temperature and pressure by a RF-biased PECVD technique. In such a process, the substrate biasing effect (Vb) on the related film composition, structure, morphology, and optical properties are investigated. The results show that the O:Ti concentration ratio in all the films is roughly in stoichiometric proportion of 2, and the binding energy difference between the O 1s and Ti 2p3/2 levels indicates the formal valence state Ti4+ in all the films. The phase transformation from anatase to rutile is identified by Raman spectroscopy. At the floating potential, the first growth stage yields a well organized columnar layer, ∼90 nm in thickness, and this layer within a thick film (∼365 nm) has roughly the same optical properties as the thin film of ∼90 nm which is separately deposited. However, the columnar structure can be eliminated by using |Vb| ≧ 50 V. Spectroscopic ellipsometry is used to obtain the film optical properties, and appropriate fitting parameters have been found for the measured data. © 2016 Elsevier Ltd
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Dates and versions

hal-01372799 , version 1 (27-09-2016)

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D. Li, A. Goullet, Michèle Carette, A. Granier, Y. Zhang, et al.. Structural and optical properties of RF-biased PECVD TiO2 thin films deposited in an O2/TTIP helicon reactor. Vacuum, 2016, 131, pp.231-239. ⟨10.1016/j.vacuum.2016.07.004⟩. ⟨hal-01372799⟩
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