Direct power injection on functional and non-functional signals of SPI EEPROM memories

Mohamed Amellal (1, 2) , Sjoerd Op 'T Land (1, 2) , Richard Perdriau (2, 1) , Mohamed Ramdani (1, 2) , Ali Ahaitouf (3) , M'Hamed Drissi (2)

1 ESEO-EMC
2 IETR - Institut d'Électronique et des Technologies du numéRique
3 LSSC - Laboratoire Signaux Systèmes et Composants

This paper deals with the conducted immunity of SPI EEPROM memories. The design and implementation of a wideband radio frequency-baseband multiplexer are described. This multiplexer makes it possible to superimpose radio frequency noise to a functional baseband signal with controlled and repeatable transfer characteristics. The baseband path has a measured DC - 380MHz bandwidth, while the radio frequency path (up to 1W) has a 150kHz - 5GHz bandwidth. This multiplexer is used to compare the conducted immunity of functional and non-functional pins of EEPROM memories with a single measurement set-up.

Mots clés: integrated-circuits

Domaines: Réseaux et télécommunications [cs.NI]; Electronique

Mohamed Amellal, Sjoerd Op 'T Land, Richard Perdriau, Mohamed Ramdani, Ali Ahaitouf, et al.. Direct power injection on functional and non-functional signals of SPI EEPROM memories. Electromagnetic Compatibility of Integrated Circuits (EMC Compo), 2015 10th International Workshop, Nov 2015, EDINBURGH, United Kingdom. pp.24--28, ⟨10.1109/EMCCompo.2015.7358324⟩. ⟨hal-01380047⟩