Improvement of n-type OTFT electrical stability by gold electrode modification

M. Robin (1, 2) , M. Harnois (1) , Y. Molard (2) , E. Jacques (1)

1 IETR - Institut d'Électronique et des Technologies du numéRique
2 ISCR - Institut des Sciences Chimiques de Rennes

N-type organic thin film transistors (OTFT) containing modified gold electrodes have been fabricated to investigate the influence of the self assembled monolayer on the transistor characteristics. We report on the effect of drain/source modification by thiol derivatives on the performances, electrical parameters uniformity and electrical stability of C60 transistors. In the literature, electrical instability is often attributed to organic semiconductor (OSC), OSC-insulator interface and insulator. We found here that OSC-metal interfaces affect dramatically the operational stability for bottom gate/bottom contact structure. These effects have been attributed to morphological evolution at the interface metal-OSC induced by the self-assembled monolayers. © 2016 Elsevier B.V.

Keywords: Chemical sensors; Electric network parameters; Electrodes; Field effect transistors; Fullerenes; Gold; Monolayers; Organic polymers; Phototransistors; Semiconducting organic compounds; Stability; Thin film circuits; Thin film transistors; Thin films; Transistors; Electrical instability; Electrical parameter; Electrical stability; Morphological evolution; Operational stability; Organic thin film transistors; Sams; Transistor characteristics; Self assembled monolayers

Domains: Computer Science [cs]; Networking and Internet Architecture [cs.NI]; Engineering Sciences [physics]; Electronics

M. Robin, M. Harnois, Y. Molard, E. Jacques. Improvement of n-type OTFT electrical stability by gold electrode modification. Organic Electronics, 2016, 39, pp.214--221. ⟨10.1016/j.orgel.2016.10.004⟩. ⟨hal-01397914⟩