Effective Metal Top Contact on the Organic Layer via Buffer-Layer-Assisted Growth: A Multiscale Characterization of Au/Hexadecanethiol/n-GaAs(100) Junctions

Abstract : In the field of organic and molecular electronics at monolayer coverage, the need for abrupt and well-controlled top metal contacts is a key point. A general method which provides reliable molecular junctions with most metals remains to be found. In this paper we show that reliable molecular junctions Au/hexadecanethiol/n-GaAs(100) are obtained using buffer-layer-assisted growth (BLAG). They show in hot electron transport measurements at the nanoscale a tunnel regime through the organic monolayer with a full spatial uniformity. Using ballistic electron emission microscopy (BEEM) in the spectroscopic mode as well as photoemission and C(V)-transport measurements, we draw a coherent band alignment scheme of the whole heterostructure at the nanoscale and at the macroscopic scale. Through this study, the BLAG method appears as a general method that should work for contacting organic monolayers with most metals. © 2016 American Chemical Society.
Document type :
Journal articles
Complete list of metadatas

https://hal-univ-rennes1.archives-ouvertes.fr/hal-01416360
Contributor : Laurent Jonchère <>
Submitted on : Wednesday, December 14, 2016 - 1:55:24 PM
Last modification on : Monday, December 10, 2018 - 1:57:32 PM

Identifiers

Citation

Alexandra Junay, Sophie Guézo, Pascal Turban, Sylvain Tricot, Arnaud Le Pottier, et al.. Effective Metal Top Contact on the Organic Layer via Buffer-Layer-Assisted Growth: A Multiscale Characterization of Au/Hexadecanethiol/n-GaAs(100) Junctions. Journal of Physical Chemistry C, American Chemical Society, 2016, 120, pp.24056--24062. ⟨10.1021/acs.jpcc.6b05729⟩. ⟨hal-01416360⟩

Share

Metrics

Record views

238