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Facile preparation and enhanced photoelectrical performance of Sb2Se3 nano-rods by magnetron sputtering deposition

Abstract : In this work, a simple and effective method for fabricating Sb2Se3 nano-rods films by magnetron sputtering Sb2Se3 alloy target at a substrate temperature of 375 degrees C is proposed. The thermally induced regular shape and vertically arrayed nano-rods exhibits a well-crystallized structure with a preferred crystallographic orientation of (221) and a stable valence of Sb3+ and Se (2-). The obtained thin film has a band-gap of 1.32 eV and a high absorption coefficient of 10(5) cm(-1) in visible region. The photo-electrochemical measurements show that the Sb2Se3 nano-rods are p-type semiconductors with an excellent photo-response. A photovoltaic solar cell using the Sb2Se3 nano-rods film as absorber has demonstrated and a clear photovoltaic effect with an encouraging power conversion efficiency of 2.11% can be achieved.
Keywords : nanowires
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Journal articles
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https://hal-univ-rennes1.archives-ouvertes.fr/hal-01438108
Contributor : Laurent Jonchère <>
Submitted on : Tuesday, January 17, 2017 - 2:49:37 PM
Last modification on : Thursday, March 5, 2020 - 2:05:17 PM

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Guang-Xing Liang, Xiang-Hua Zhang, Hong-Li Ma, Ju-Guang Hu, Bo Fan, et al.. Facile preparation and enhanced photoelectrical performance of Sb2Se3 nano-rods by magnetron sputtering deposition. Solar Energy Materials and Solar Cells, Elsevier, 2017, 160, pp.257--262. ⟨10.1016/j.solmat.2016.10.042⟩. ⟨hal-01438108⟩

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