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Enhanced Thermoelectric Properties of In-Doped ZnSb Thin Film with Surface Nanocrystallization

Abstract : This work establishes the high-temperature properties of In-doped ZnSb thin films prepared by a multistep cosputtering method on flexible substrates. The microstructure and thermoelectric properties of the In-doped ZnSb thin films were investigated. X-Ray diffraction results indicated that the main peaks of the In-doped ZnSb thin films were related to ZnSb phase, with some nanocrystallization on the surface after In doping. All samples exhibited p-type conduction behavior, with increased Seebeck coefficient after In doping. The thermal conductivity decreased sharply for the In-doped samples with nanocrystallization, resulting in a ZT value almost six times higher than for undoped ZnSb thin film.
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https://hal-univ-rennes1.archives-ouvertes.fr/hal-01475459
Contributor : Laurent Jonchère <>
Submitted on : Thursday, February 23, 2017 - 5:13:12 PM
Last modification on : Thursday, March 5, 2020 - 2:06:41 PM

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Zhuang-Hao Zheng, Ping Fan, Jing-Ting Luo, Guang-Xing Liang. Enhanced Thermoelectric Properties of In-Doped ZnSb Thin Film with Surface Nanocrystallization. Journal of Electronic Materials, Institute of Electrical and Electronics Engineers, 2017, 46 (2), pp.1319--1323. ⟨10.1007/s11664-016-5123-z⟩. ⟨hal-01475459⟩

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